Shallow acceptor complexes in p-type ZnO

Published

Journal Article

We show that N-doped ZnO films grown on sapphire can exhibit significant (∼1018 cm-3) room-temperature p-type behavior when sufficient nitrogen (N) is incorporated and the material is annealed appropriately. Substitutional N on the oxygen (O) sublattice is a deep acceptor; however, shallow acceptor complexes involve N, H, and zinc vacancies (V Zn). Combining secondary ion mass spectrometry, Raman-scattering, photoluminescence, and Hall-effect data, we establish the evolution of N from its initial incorporation on a Zn site to a final shallow acceptor complex VZn-NO-H with an ionization energy of ca. 130 meV. This complex is responsible for the observed p-type behavior. © 2013 AIP Publishing LLC.

Full Text

Duke Authors

Cited Authors

  • Reynolds, JG; Reynolds, CL; Mohanta, A; Muth, JF; Rowe, JE; Everitt, HO; Aspnes, DE

Published Date

  • April 15, 2013

Published In

Volume / Issue

  • 102 / 15

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.4802753

Citation Source

  • Scopus