Low dislocation densities and long carrier lifetimes in GaN thin films grown on a Si Nx nanonetwork


Journal Article

Significant improvement of structural and optical qualities of GaN thin films on sapphire substrates was achieved by metal organic chemical vapor deposition with in situ Si Nx nanonetwork. Transmission electron microscope (TEM) studies revealed that screw- and edge-type dislocations were reduced to 4.4× 107 and 1.7× 107 cm-2, respectively, for a ∼5.5-μm -thick layer. Furthermore, room temperature carrier lifetimes of 2.22 and 2.49 ns were measured by time-resolved photoluminescence (TRPL) for samples containing single and double Si Nx network layers, respectively, representing a significant improvement over the previous studies. The consistent trends among the TEM, x-ray diffraction, and TRPL measurements suggest that in situ Si Nx network reduces line defects effectively as well as the point-defect-related nonradiative centers. © 2007 American Institute of Physics.

Full Text

Duke Authors

Cited Authors

  • Xie, J; Özgür, U; Fu, Y; Ni, X; MorkoĢ§, H; Inoki, CK; Kuan, TS; Foreman, JV; Everitt, HO

Published Date

  • February 5, 2007

Published In

Volume / Issue

  • 90 / 4

International Standard Serial Number (ISSN)

  • 0003-6951

Digital Object Identifier (DOI)

  • 10.1063/1.2433754

Citation Source

  • Scopus