American Vacuum Society

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  Publisher Of

  • Ellipsometric monitoring and control of the rapid thermal oxidation of silicon.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  11:2096-2096. 1993
  • Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  11:2280-2280. 1993
  • Growth and properties of AlInAs–GaInAs alloys and quantum wells on (110) InP.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  11:817-817. 1993
  • Structural and electrical properties of low temperature GaInAs.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  11:798-798. 1993
  • Growth and properties of high mobility strained inverted AlInAs–GaInAs modulation doped structures.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  10:1017-1017. 1992
  • Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  10:369-369. 1992
  • Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  9:914-914. 1991
  • One-dimensional ballistic transport in AlGaAs/GaAs electron waveguides.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  7:2039-2039. 1989
  • The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  7:384-384. 1989
  • The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  6:678-678. 1988
  • Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  5:785-785. 1987
  • Summary Abstract: Mn redistribution in doped GaInAs.  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures.  4:543-543. 1986
  • Summary Abstract: Correlation between Schottky barrier height and phase stoichiometry/structure of silicide–silicon interfaces.  Journal of Vacuum Science and Technology.  20:688-689. 1982