American Vacuum Society
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Publisher Of
- Ellipsometric monitoring and control of the rapid thermal oxidation of silicon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2096-2096. 1993
- Highly selective reactive ion etch process for InP-based device fabrication using methane/hydrogen/argon. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:2280-2280. 1993
- Growth and properties of AlInAs–GaInAs alloys and quantum wells on (110) InP. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:817-817. 1993
- Structural and electrical properties of low temperature GaInAs. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 11:798-798. 1993
- Growth and properties of high mobility strained inverted AlInAs–GaInAs modulation doped structures. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1017-1017. 1992
- Reconstructed two-dimensional doping profiles from multiple one-dimensional secondary ion mass spectrometry measurements. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:369-369. 1992
- Surface topography and nucleation of chemical vapor deposition diamond films on silicon by scanning tunneling microscopy. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:914-914. 1991
- One-dimensional ballistic transport in AlGaAs/GaAs electron waveguides. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:2039-2039. 1989
- The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 7:384-384. 1989
- The impact of epitaxial layer design and quality on GaInAs/AlInAs high-electron-mobility transistor performance. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6:678-678. 1988
- Molecular-beam epitaxial growth and characterization of strained GaInAs/AlInAs and InAs/GaAs quantum well two-dimensional electron gas field-effect transistors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 5:785-785. 1987
- Summary Abstract: Mn redistribution in doped GaInAs. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:543-543. 1986
- Summary Abstract: Correlation between Schottky barrier height and phase stoichiometry/structure of silicide–silicon interfaces. Journal of Vacuum Science and Technology. 20:688-689. 1982