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Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon

Publication ,  Journal Article
Palit, S; Kirch, J; Mawst, L; Kuech, T; Jokerst, NM
Published in: Optics InfoBase Conference Papers
December 1, 2009

A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2. © 2009 Optical Society of America.

Duke Scholars

Published In

Optics InfoBase Conference Papers

EISSN

2162-2701

Publication Date

December 1, 2009
 

Citation

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Palit, S., Kirch, J., Mawst, L., Kuech, T., & Jokerst, N. M. (2009). Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon. Optics InfoBase Conference Papers.
Palit, S., J. Kirch, L. Mawst, T. Kuech, and N. M. Jokerst. “Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon.” Optics InfoBase Conference Papers, December 1, 2009.
Palit S, Kirch J, Mawst L, Kuech T, Jokerst NM. Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon. Optics InfoBase Conference Papers. 2009 Dec 1;
Palit, S., et al. “Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon.” Optics InfoBase Conference Papers, Dec. 2009.
Palit S, Kirch J, Mawst L, Kuech T, Jokerst NM. Thin Film P-ridge N-stripe III-V laser broad area metal-metal bonded to silicon. Optics InfoBase Conference Papers. 2009 Dec 1;

Published In

Optics InfoBase Conference Papers

EISSN

2162-2701

Publication Date

December 1, 2009