Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity
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Makarova, M; Gong, Y; Vučković, J; Yerci, S; Li, R; Negro, LD
Published in: IEEE International Conference on Group IV Photonics GFP
December 1, 2009
Light emission at 1.54 μm from Er-doped amorphous silicon nitride layer coupled to high quality factor photonic crystal resonators is studied. Resonances exhibit line-width narrowing with pump power, signifying differential gain in the material. © 2009 IEEE.
Duke Scholars
Published In
IEEE International Conference on Group IV Photonics GFP
DOI
ISSN
1949-2081
ISBN
9781424444021
Publication Date
December 1, 2009
Start / End Page
220 / 222
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Makarova, M., Gong, Y., Vučković, J., Yerci, S., Li, R., & Negro, L. D. (2009). Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity. In IEEE International Conference on Group IV Photonics GFP (pp. 220–222). https://doi.org/10.1109/GROUP4.2009.5338386
Makarova, M., Y. Gong, J. Vučković, S. Yerci, R. Li, and L. D. Negro. “Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity.” In IEEE International Conference on Group IV Photonics GFP, 220–22, 2009. https://doi.org/10.1109/GROUP4.2009.5338386.
Makarova M, Gong Y, Vučković J, Yerci S, Li R, Negro LD. Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity. In: IEEE International Conference on Group IV Photonics GFP. 2009. p. 220–2.
Makarova, M., et al. “Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity.” IEEE International Conference on Group IV Photonics GFP, 2009, pp. 220–22. Scopus, doi:10.1109/GROUP4.2009.5338386.
Makarova M, Gong Y, Vučković J, Yerci S, Li R, Negro LD. Differential gain at 1.54 μm in Er-doped silicon nitride coupled to photonic crystal cavity. IEEE International Conference on Group IV Photonics GFP. 2009. p. 220–222.
Published In
IEEE International Conference on Group IV Photonics GFP
DOI
ISSN
1949-2081
ISBN
9781424444021
Publication Date
December 1, 2009
Start / End Page
220 / 222