Temperature dependence of energy transfer mechanisms in Eu-doped GaN

Time-resolved photoluminescence measurements of the ⁵D 0→ ⁷F 2 and ⁵G 0→ ⁷F 3 transitions were performed for investigating the temperature-dependent energy transfer mechanisms of Eu-doped GaN. Numerically integrated rate equation models enabled the analysis of the luminescence decay. A nonlinear least-squares technique was used to fit the model predictions to the data in order to extract the decay constants. The ⁵D 0 state exhibited a radiative decay rate which was measured to be 166 μs.