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Size dependence of carrier recombination efficiency in GaN quantum dots

Publication ,  Journal Article
Neogi, A; Everitt, H; Morkoç, H; Kuroda, T; Tackeuchi, A
Published in: IEEE Transactions on Nanotechnology
March 1, 2005

The dependence of radiative recombination rate and efficiency on GaN quantum-dot (QD) size and temperature is studied by time-resolved photoluminescence (PL) spectroscopy. The emission is dominated by radiative recombination at low temperatures (<125 K) and exhibits high PL efficiency at room temperature. The radiative lifetime and the relative quantum efficiency decrease with the decreasing QD size. © 2005 IEEE.

Published In

IEEE Transactions on Nanotechnology

DOI

ISSN

1536-125X

Publication Date

March 1, 2005

Volume

4

Issue

2

Start / End Page

297 / 299

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 4009 Electronics, sensors and digital hardware
  • 1007 Nanotechnology
  • 0906 Electrical and Electronic Engineering
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Chicago
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Neogi, A., Everitt, H., Morkoç, H., Kuroda, T., & Tackeuchi, A. (2005). Size dependence of carrier recombination efficiency in GaN quantum dots. IEEE Transactions on Nanotechnology, 4(2), 297–299. https://doi.org/10.1109/TNANO.2004.834170
Neogi, A., H. Everitt, H. Morkoç, T. Kuroda, and A. Tackeuchi. “Size dependence of carrier recombination efficiency in GaN quantum dots.” IEEE Transactions on Nanotechnology 4, no. 2 (March 1, 2005): 297–99. https://doi.org/10.1109/TNANO.2004.834170.
Neogi A, Everitt H, Morkoç H, Kuroda T, Tackeuchi A. Size dependence of carrier recombination efficiency in GaN quantum dots. IEEE Transactions on Nanotechnology. 2005 Mar 1;4(2):297–9.
Neogi, A., et al. “Size dependence of carrier recombination efficiency in GaN quantum dots.” IEEE Transactions on Nanotechnology, vol. 4, no. 2, Mar. 2005, pp. 297–99. Scopus, doi:10.1109/TNANO.2004.834170.
Neogi A, Everitt H, Morkoç H, Kuroda T, Tackeuchi A. Size dependence of carrier recombination efficiency in GaN quantum dots. IEEE Transactions on Nanotechnology. 2005 Mar 1;4(2):297–299.

Published In

IEEE Transactions on Nanotechnology

DOI

ISSN

1536-125X

Publication Date

March 1, 2005

Volume

4

Issue

2

Start / End Page

297 / 299

Related Subject Headings

  • Nanoscience & Nanotechnology
  • 4009 Electronics, sensors and digital hardware
  • 1007 Nanotechnology
  • 0906 Electrical and Electronic Engineering
  • 0303 Macromolecular and Materials Chemistry