Graphene technology with inverted-T gate and RF passives on 200 mm platform
Publication
, Conference
Han, SJ; Valdes-Garcia, A; Bol, AA; Franklin, AD; Farmer, D; Kratschmer, E; Jenkins, KA; Haensch, W
Published in: Technical Digest - International Electron Devices Meeting, IEDM
December 1, 2011
Wafer-scale graphene devices processed entirely in a standard 200 mm silicon fab are demonstrated for the first time. New embedded gate structures enable full saturation of the drain current in graphene FETs with sub-μm channels, resulting in high intrinsic voltage gain. In addition, passive devices were monolithically integrated with graphene transistors to form the first GHz-range graphene IC using large-scale CVD graphene. The demonstration of high performance graphene FETs and IC fabricated using a 200 mm platform is a major step in transitioning this promising material from a scientific curiosity into a real technology. © 2011 IEEE.
Duke Scholars
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
ISBN
9781457705052
Publication Date
December 1, 2011
Citation
APA
Chicago
ICMJE
MLA
NLM
Han, S. J., Valdes-Garcia, A., Bol, A. A., Franklin, A. D., Farmer, D., Kratschmer, E., … Haensch, W. (2011). Graphene technology with inverted-T gate and RF passives on 200 mm platform. In Technical Digest - International Electron Devices Meeting, IEDM. https://doi.org/10.1109/IEDM.2011.6131473
Han, S. J., A. Valdes-Garcia, A. A. Bol, A. D. Franklin, D. Farmer, E. Kratschmer, K. A. Jenkins, and W. Haensch. “Graphene technology with inverted-T gate and RF passives on 200 mm platform.” In Technical Digest - International Electron Devices Meeting, IEDM, 2011. https://doi.org/10.1109/IEDM.2011.6131473.
Han SJ, Valdes-Garcia A, Bol AA, Franklin AD, Farmer D, Kratschmer E, et al. Graphene technology with inverted-T gate and RF passives on 200 mm platform. In: Technical Digest - International Electron Devices Meeting, IEDM. 2011.
Han, S. J., et al. “Graphene technology with inverted-T gate and RF passives on 200 mm platform.” Technical Digest - International Electron Devices Meeting, IEDM, 2011. Scopus, doi:10.1109/IEDM.2011.6131473.
Han SJ, Valdes-Garcia A, Bol AA, Franklin AD, Farmer D, Kratschmer E, Jenkins KA, Haensch W. Graphene technology with inverted-T gate and RF passives on 200 mm platform. Technical Digest - International Electron Devices Meeting, IEDM. 2011.
Published In
Technical Digest - International Electron Devices Meeting, IEDM
DOI
ISSN
0163-1918
ISBN
9781457705052
Publication Date
December 1, 2011