Edge contacts to multilayer MoS2 using in situ Ar ion beam
The dimensional scaling of transistors has been a continuous effort for decades. For devices at the sub-5 nm scale, two-dimensional transition metal dichalcogenides, including MoS2, show great promise for preserving electrostatic control and performance. Numerous studies have theoretically [1] and experimentally [2] investigated the effect of short channel and contact lengths on the MoS2 transistor performance. Though it has been recognized that edge contacts could drastically decrease contact resistance and improve performance of MoS2 FETs [1], no experimental work has demonstrated pure edge contacts to this layered semiconductor using in situ etching. In this work, we demonstrate partial and full edge-contacted multilayer MoS2 FETs by using an in situ Ar ion beam.
