Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition
Publication
, Journal Article
Stoner, BR; Kao, CT; Malta, DM; Glass, RC
Published in: Applied Physics Letters
December 1, 1993
A highly oriented, (100) textured diamond film was grown on a Si substrate, followed by the deposition of an epitaxial boron-doped layer for electrical characterization. Temperature-dependent Hall effect measurements were performed between 180 and 440 K. The 165 cm2/Vs hole mobility measured at room temperature is approximately five times greater than the highest reported mobilities for polycrystalline diamond. The relative improvement in the electronic quality of diamond films grown on Si, due to the reduction of misorientation and grain boundary angles, has been demonstrated. X-ray diffraction pole measurements were performed on the (100) oriented film in order to quantify the degree of misorientation.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
19
Start / End Page
2347 / 2349
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Stoner, B. R., Kao, C. T., Malta, D. M., & Glass, R. C. (1993). Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition. Applied Physics Letters, 62(19), 2347–2349. https://doi.org/10.1063/1.109414
Stoner, B. R., C. T. Kao, D. M. Malta, and R. C. Glass. “Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition.” Applied Physics Letters 62, no. 19 (December 1, 1993): 2347–49. https://doi.org/10.1063/1.109414.
Stoner BR, Kao CT, Malta DM, Glass RC. Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition. Applied Physics Letters. 1993 Dec 1;62(19):2347–9.
Stoner, B. R., et al. “Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition.” Applied Physics Letters, vol. 62, no. 19, Dec. 1993, pp. 2347–49. Scopus, doi:10.1063/1.109414.
Stoner BR, Kao CT, Malta DM, Glass RC. Hall effect measurements on boron-doped, highly oriented diamond films grown on silicon via microwave plasma chemical vapor deposition. Applied Physics Letters. 1993 Dec 1;62(19):2347–2349.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
19
Start / End Page
2347 / 2349
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences