Wafer bonding of diamond films to silicon for silicon-on-insulator technology
Publication
, Journal Article
Yushin, GN; Wolter, SD; Kvit, AV; Collazo, R; Prater, JT; Stoner, BR; Sitar, Z
Published in: Materials Research Society Symposium Proceedings
January 1, 2002
Polycrystalline diamond films previously grown on silicon were polished to an RMS roughness of 15 nm and bonded to the silicon in a dedicated ultrahigh vacuum bonding chamber. Successful bonding under a uniaxial mechanical stress of 32 MPa was observed at temperatures as tow as 950°C. Scanning acoustic microscopy indicated complete bonding at fusion temperatures above 1150°C. Cross-sectional transmission electron microcopy later revealed a 30 nm thick intermediate amorphous layer consisting of silicon, carbon and oxygen.
Duke Scholars
Published In
Materials Research Society Symposium Proceedings
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
686
Start / End Page
69 / 74
Citation
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Yushin, G. N., Wolter, S. D., Kvit, A. V., Collazo, R., Prater, J. T., Stoner, B. R., & Sitar, Z. (2002). Wafer bonding of diamond films to silicon for silicon-on-insulator technology. Materials Research Society Symposium Proceedings, 686, 69–74.
Yushin, G. N., S. D. Wolter, A. V. Kvit, R. Collazo, J. T. Prater, B. R. Stoner, and Z. Sitar. “Wafer bonding of diamond films to silicon for silicon-on-insulator technology.” Materials Research Society Symposium Proceedings 686 (January 1, 2002): 69–74.
Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Stoner BR, et al. Wafer bonding of diamond films to silicon for silicon-on-insulator technology. Materials Research Society Symposium Proceedings. 2002 Jan 1;686:69–74.
Yushin, G. N., et al. “Wafer bonding of diamond films to silicon for silicon-on-insulator technology.” Materials Research Society Symposium Proceedings, vol. 686, Jan. 2002, pp. 69–74.
Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Stoner BR, Sitar Z. Wafer bonding of diamond films to silicon for silicon-on-insulator technology. Materials Research Society Symposium Proceedings. 2002 Jan 1;686:69–74.
Published In
Materials Research Society Symposium Proceedings
ISSN
0272-9172
Publication Date
January 1, 2002
Volume
686
Start / End Page
69 / 74