Failure mode analysis of GaN-HEMT under high temperature operation
Publication
, Conference
Kurachi, Y; Yamamoto, H; Nose, Y; Shimizu, S; Tateno, Y; Yonemura, T; Furukawa, M
Published in: IEEE International Reliability Physics Symposium Proceedings
May 25, 2018
The purpose of this study is to investigate the physical mechanism of the threshold voltage shift of GaN-HEMT in high temperature storage tests. Using microscopic Raman spectrometry, we analyzed crystal distortion under the gate metal of devices which showed positive shift of the threshold voltage after heat treatments. Of heat treatment, the crystal extended vertically (c-axis direction). From this observation, we concluded that one possible reason for the threshold voltage shift in high temperature storage tests is the change of the piezoelectric polarization density dependent on the change of the crystal distortion under the gate metal.
Duke Scholars
Published In
IEEE International Reliability Physics Symposium Proceedings
DOI
ISSN
1541-7026
ISBN
9781538654798
Publication Date
May 25, 2018
Volume
2018-March
Start / End Page
PWB.31 / PWB.34
Citation
APA
Chicago
ICMJE
MLA
NLM
Kurachi, Y., Yamamoto, H., Nose, Y., Shimizu, S., Tateno, Y., Yonemura, T., & Furukawa, M. (2018). Failure mode analysis of GaN-HEMT under high temperature operation. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2018-March, p. PWB.31-PWB.34). https://doi.org/10.1109/IRPS.2018.8353706
Kurachi, Y., H. Yamamoto, Y. Nose, S. Shimizu, Y. Tateno, T. Yonemura, and M. Furukawa. “Failure mode analysis of GaN-HEMT under high temperature operation.” In IEEE International Reliability Physics Symposium Proceedings, 2018-March:PWB.31-PWB.34, 2018. https://doi.org/10.1109/IRPS.2018.8353706.
Kurachi Y, Yamamoto H, Nose Y, Shimizu S, Tateno Y, Yonemura T, et al. Failure mode analysis of GaN-HEMT under high temperature operation. In: IEEE International Reliability Physics Symposium Proceedings. 2018. p. PWB.31-PWB.34.
Kurachi, Y., et al. “Failure mode analysis of GaN-HEMT under high temperature operation.” IEEE International Reliability Physics Symposium Proceedings, vol. 2018-March, 2018, p. PWB.31-PWB.34. Scopus, doi:10.1109/IRPS.2018.8353706.
Kurachi Y, Yamamoto H, Nose Y, Shimizu S, Tateno Y, Yonemura T, Furukawa M. Failure mode analysis of GaN-HEMT under high temperature operation. IEEE International Reliability Physics Symposium Proceedings. 2018. p. PWB.31-PWB.34.
Published In
IEEE International Reliability Physics Symposium Proceedings
DOI
ISSN
1541-7026
ISBN
9781538654798
Publication Date
May 25, 2018
Volume
2018-March
Start / End Page
PWB.31 / PWB.34