Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests
Publication
, Conference
Tateno, Y; Kurachi, Y; Yamamoto, H; Nakabayashi, T
Published in: IEEE International Reliability Physics Symposium Proceedings
May 25, 2018
The purpose of this study is to investigate the physical mechanism of pulsed-IV degradation under high temperature storage tests. Using the measurements of the pulsed S-parameters immediately after the voltage stress was applied to the GaN-HEMT, we carried out the delay time analysis. As a result, we found that the so-called 'virtual gate' region extended toward the drain electrode due to high temperature storage. From this result, we concluded that the electron tunnel injection probability at the gate edge increased and degraded the pulsed-IV characteristics.
Duke Scholars
Published In
IEEE International Reliability Physics Symposium Proceedings
DOI
ISSN
1541-7026
ISBN
9781538654798
Publication Date
May 25, 2018
Volume
2018-March
Start / End Page
PWB.21 / PWB.25
Citation
APA
Chicago
ICMJE
MLA
NLM
Tateno, Y., Kurachi, Y., Yamamoto, H., & Nakabayashi, T. (2018). Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests. In IEEE International Reliability Physics Symposium Proceedings (Vol. 2018-March, p. PWB.21-PWB.25). https://doi.org/10.1109/IRPS.2018.8353705
Tateno, Y., Y. Kurachi, H. Yamamoto, and T. Nakabayashi. “Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests.” In IEEE International Reliability Physics Symposium Proceedings, 2018-March:PWB.21-PWB.25, 2018. https://doi.org/10.1109/IRPS.2018.8353705.
Tateno Y, Kurachi Y, Yamamoto H, Nakabayashi T. Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests. In: IEEE International Reliability Physics Symposium Proceedings. 2018. p. PWB.21-PWB.25.
Tateno, Y., et al. “Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests.” IEEE International Reliability Physics Symposium Proceedings, vol. 2018-March, 2018, p. PWB.21-PWB.25. Scopus, doi:10.1109/IRPS.2018.8353705.
Tateno Y, Kurachi Y, Yamamoto H, Nakabayashi T. Investigation of the pulsed-IV degradation mechanism of GaN-HEMT under high temperature storage tests. IEEE International Reliability Physics Symposium Proceedings. 2018. p. PWB.21-PWB.25.
Published In
IEEE International Reliability Physics Symposium Proceedings
DOI
ISSN
1541-7026
ISBN
9781538654798
Publication Date
May 25, 2018
Volume
2018-March
Start / End Page
PWB.21 / PWB.25