Integrated Thin Film Silicon Detectors for Fluorescence Sensing
Publication
, Conference
Dighe, A; Jokerst, NM
Published in: Proceedings of IEEE Sensors
December 26, 2018
The design, fabrication and test of a thin film Si chip-scale fluorescence sensor designed for integration with microfluidic systems isG reported. The photodetector has low dark current (pA) and responsivity of 0.3 A/W at 532 nm. Droplets of 10 microliter with varying fluorophore concentrations were tested and the data is linear with a model fit with 95% confidence and signal to noise ratios greater than 20 dB.
Duke Scholars
Published In
Proceedings of IEEE Sensors
DOI
EISSN
2168-9229
ISSN
1930-0395
Publication Date
December 26, 2018
Volume
2018-October
Citation
APA
Chicago
ICMJE
MLA
NLM
Dighe, A., & Jokerst, N. M. (2018). Integrated Thin Film Silicon Detectors for Fluorescence Sensing. In Proceedings of IEEE Sensors (Vol. 2018-October). https://doi.org/10.1109/ICSENS.2018.8589547
Dighe, A., and N. M. Jokerst. “Integrated Thin Film Silicon Detectors for Fluorescence Sensing.” In Proceedings of IEEE Sensors, Vol. 2018-October, 2018. https://doi.org/10.1109/ICSENS.2018.8589547.
Dighe A, Jokerst NM. Integrated Thin Film Silicon Detectors for Fluorescence Sensing. In: Proceedings of IEEE Sensors. 2018.
Dighe, A., and N. M. Jokerst. “Integrated Thin Film Silicon Detectors for Fluorescence Sensing.” Proceedings of IEEE Sensors, vol. 2018-October, 2018. Scopus, doi:10.1109/ICSENS.2018.8589547.
Dighe A, Jokerst NM. Integrated Thin Film Silicon Detectors for Fluorescence Sensing. Proceedings of IEEE Sensors. 2018.
Published In
Proceedings of IEEE Sensors
DOI
EISSN
2168-9229
ISSN
1930-0395
Publication Date
December 26, 2018
Volume
2018-October