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Coulomb blockade correlations in a coupled single-electron device system

Publication ,  Journal Article
Cao, L; Altomare, F; Guo, H; Feng, M; Chang, AM
Published in: Solid State Communications
July 1, 2019

Single-electron devices, such as metal single-electron transistor (SET) and semiconductor quantum dot (QD), are Coulomb blockade (CB) devices with promising applications in both quantum and classical beyond-Si information technologies. As an example, a coupled SET-QD system can provide an experimental platform for addressing, manipulating, and detecting spin and/or charge-based qubits for quantum information processing. We have designed and fabricated a prototype device in this family: a series-coupled double quantum dot (DQD) with side-coupled and/or top-coupled Al single-electron transistors (Al-SET), and implemented the readout of the single electron charging and CB behaviors in a QD using the Al-SET. The readout operation is manifested by the correlated CB oscillations taking place separately in the SET and in the QD; these oscillations originate from that the change of electrons one by one in the QD. We have developed an electrostatics model to study the CB correlations in the capacitively coupled QD/Al-SET device system, which shows qualitative agreement with our experimental observations. Moreover, our design and device fabrication are compatible with modern semiconductor techniques, and can potentially be scaled up into larger integrated systems with quantum and classic bit operation and measurement circuitry.

Duke Scholars

Published In

Solid State Communications

DOI

ISSN

0038-1098

Publication Date

July 1, 2019

Volume

296

Start / End Page

12 / 16

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics
 

Citation

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Cao, L., Altomare, F., Guo, H., Feng, M., & Chang, A. M. (2019). Coulomb blockade correlations in a coupled single-electron device system. Solid State Communications, 296, 12–16. https://doi.org/10.1016/j.ssc.2019.04.004
Cao, L., F. Altomare, H. Guo, M. Feng, and A. M. Chang. “Coulomb blockade correlations in a coupled single-electron device system.” Solid State Communications 296 (July 1, 2019): 12–16. https://doi.org/10.1016/j.ssc.2019.04.004.
Cao L, Altomare F, Guo H, Feng M, Chang AM. Coulomb blockade correlations in a coupled single-electron device system. Solid State Communications. 2019 Jul 1;296:12–6.
Cao, L., et al. “Coulomb blockade correlations in a coupled single-electron device system.” Solid State Communications, vol. 296, July 2019, pp. 12–16. Scopus, doi:10.1016/j.ssc.2019.04.004.
Cao L, Altomare F, Guo H, Feng M, Chang AM. Coulomb blockade correlations in a coupled single-electron device system. Solid State Communications. 2019 Jul 1;296:12–16.
Journal cover image

Published In

Solid State Communications

DOI

ISSN

0038-1098

Publication Date

July 1, 2019

Volume

296

Start / End Page

12 / 16

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 3403 Macromolecular and materials chemistry
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0204 Condensed Matter Physics