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Three dimensional integrated circuits: Epitaxial lift off GaAs photodetectors integrated directly on top of silicon circuits

Publication ,  Conference
Camperi-Ginestet, C; Kim, YW; Jokerst, NM; Allen, MG; Brooke, MA
Published in: LEOS Summer Topical Meeting
January 1, 1992

Duke Scholars

Published In

LEOS Summer Topical Meeting

DOI

ISSN

1099-4742

Publication Date

January 1, 1992

Start / End Page

C24 / C25
 

Citation

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Camperi-Ginestet, C., Kim, Y. W., Jokerst, N. M., Allen, M. G., & Brooke, M. A. (1992). Three dimensional integrated circuits: Epitaxial lift off GaAs photodetectors integrated directly on top of silicon circuits. In LEOS Summer Topical Meeting (pp. C24–C25). https://doi.org/10.1109/LEOSST.1992.697487
Camperi-Ginestet, C., Y. W. Kim, N. M. Jokerst, M. G. Allen, and M. A. Brooke. “Three dimensional integrated circuits: Epitaxial lift off GaAs photodetectors integrated directly on top of silicon circuits.” In LEOS Summer Topical Meeting, C24–25, 1992. https://doi.org/10.1109/LEOSST.1992.697487.
Camperi-Ginestet C, Kim YW, Jokerst NM, Allen MG, Brooke MA. Three dimensional integrated circuits: Epitaxial lift off GaAs photodetectors integrated directly on top of silicon circuits. In: LEOS Summer Topical Meeting. 1992. p. C24–5.
Camperi-Ginestet, C., et al. “Three dimensional integrated circuits: Epitaxial lift off GaAs photodetectors integrated directly on top of silicon circuits.” LEOS Summer Topical Meeting, 1992, pp. C24–25. Scopus, doi:10.1109/LEOSST.1992.697487.
Camperi-Ginestet C, Kim YW, Jokerst NM, Allen MG, Brooke MA. Three dimensional integrated circuits: Epitaxial lift off GaAs photodetectors integrated directly on top of silicon circuits. LEOS Summer Topical Meeting. 1992. p. C24–C25.

Published In

LEOS Summer Topical Meeting

DOI

ISSN

1099-4742

Publication Date

January 1, 1992

Start / End Page

C24 / C25