In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices
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Kim, JY; Kwon, MK; Logeeswaran, VJ; Grego, S; Islam, MS
Published in: Proceedings of SPIE - The International Society for Optical Engineering
October 26, 2010
We demonstrate a post-growth in-situ chlorine passivation for suppressing surface-dominant transport in Si nanowires (SiNWs). The leakage current of bridged SiNWs suppressed more than five orders of magnitude as a result of chlorine passivation while the shape and structural properties of the bridging NWs remain unaffected by the post-growth in-situ HCl passivation. The chlorine passivated SiNW surfaces were found to be beneficial to enhance the high immunity to environmental degradation. © 2010 SPIE.
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Proceedings of SPIE - The International Society for Optical Engineering
DOI
ISSN
0277-786X
ISBN
9780819482648
Publication Date
October 26, 2010
Volume
7768
Related Subject Headings
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
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Kim, J. Y., Kwon, M. K., Logeeswaran, V. J., Grego, S., & Islam, M. S. (2010). In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 7768). https://doi.org/10.1117/12.861607
Kim, J. Y., M. K. Kwon, V. J. Logeeswaran, S. Grego, and M. S. Islam. “In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices.” In Proceedings of SPIE - The International Society for Optical Engineering, Vol. 7768, 2010. https://doi.org/10.1117/12.861607.
Kim JY, Kwon MK, Logeeswaran VJ, Grego S, Islam MS. In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices. In: Proceedings of SPIE - The International Society for Optical Engineering. 2010.
Kim, J. Y., et al. “In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 7768, 2010. Scopus, doi:10.1117/12.861607.
Kim JY, Kwon MK, Logeeswaran VJ, Grego S, Islam MS. In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices. Proceedings of SPIE - The International Society for Optical Engineering. 2010.
Published In
Proceedings of SPIE - The International Society for Optical Engineering
DOI
ISSN
0277-786X
ISBN
9780819482648
Publication Date
October 26, 2010
Volume
7768
Related Subject Headings
- 5102 Atomic, molecular and optical physics
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering