Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach
Publication
, Journal Article
Mukherjee, SD; Skogen, JD; Hibbs-Brenner, MK; Sullivan, AT; Kalweit, EL; Walterson, RA
Published in: Electronics Letters
November 21, 1991
Singlemode AIGaAs optical waveguides at 830 nm have been monolithically fabricated together with ion-implanted E- and D-mode GaAs MESFETs. The waveguide TE and TM propagation losses are as low as 1·5 dB/cm with < −25 dB depolarisation. E- and D-mode FETs have VT = 0·26 and − 0·20 V, and gm = 160 and 230 mS/mm, respectively. © 1991, The Institution of Electrical Engineers. All rights reserved.
Duke Scholars
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
November 21, 1991
Volume
27
Issue
24
Start / End Page
2281 / 2283
Related Subject Headings
- Electrical & Electronic Engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing
Citation
APA
Chicago
ICMJE
MLA
NLM
Mukherjee, S. D., Skogen, J. D., Hibbs-Brenner, M. K., Sullivan, A. T., Kalweit, E. L., & Walterson, R. A. (1991). Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach. Electronics Letters, 27(24), 2281–2283. https://doi.org/10.1049/el:19911410
Mukherjee, S. D., J. D. Skogen, M. K. Hibbs-Brenner, A. T. Sullivan, E. L. Kalweit, and R. A. Walterson. “Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach.” Electronics Letters 27, no. 24 (November 21, 1991): 2281–83. https://doi.org/10.1049/el:19911410.
Mukherjee SD, Skogen JD, Hibbs-Brenner MK, Sullivan AT, Kalweit EL, Walterson RA. Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach. Electronics Letters. 1991 Nov 21;27(24):2281–3.
Mukherjee, S. D., et al. “Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach.” Electronics Letters, vol. 27, no. 24, Nov. 1991, pp. 2281–83. Scopus, doi:10.1049/el:19911410.
Mukherjee SD, Skogen JD, Hibbs-Brenner MK, Sullivan AT, Kalweit EL, Walterson RA. Monolithic integration of singlemode AIGaAs optical waveguides at 830 nm with GaAs E/D-Mesfets using planar multifunctional epistructure (PME) approach. Electronics Letters. 1991 Nov 21;27(24):2281–2283.
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
November 21, 1991
Volume
27
Issue
24
Start / End Page
2281 / 2283
Related Subject Headings
- Electrical & Electronic Engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing