Strain status in Fe- And Si- doped GaN epilayers grown on sapphire
Publication
, Conference
Zheng, CC; Ning, JQ; Wang, JF; Xu, K; Zhao, DG; Xu, SJ
Published in: Photonics for Energy, PFE 2015
January 1, 2015
The effect of Fe doping on a series of Fe-doped GaN epilayers with difference doping concentrations were studied by Raman spectroscopy with comparison to Si-doped GaN samples. Compressive strain in Fe-dope GaN tend to relax.
Duke Scholars
Published In
Photonics for Energy, PFE 2015
ISBN
9781943580019
Publication Date
January 1, 2015
Citation
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Zheng, C. C., Ning, J. Q., Wang, J. F., Xu, K., Zhao, D. G., & Xu, S. J. (2015). Strain status in Fe- And Si- doped GaN epilayers grown on sapphire. In Photonics for Energy, PFE 2015.
Zheng, C. C., J. Q. Ning, J. F. Wang, K. Xu, D. G. Zhao, and S. J. Xu. “Strain status in Fe- And Si- doped GaN epilayers grown on sapphire.” In Photonics for Energy, PFE 2015, 2015.
Zheng CC, Ning JQ, Wang JF, Xu K, Zhao DG, Xu SJ. Strain status in Fe- And Si- doped GaN epilayers grown on sapphire. In: Photonics for Energy, PFE 2015. 2015.
Zheng, C. C., et al. “Strain status in Fe- And Si- doped GaN epilayers grown on sapphire.” Photonics for Energy, PFE 2015, 2015.
Zheng CC, Ning JQ, Wang JF, Xu K, Zhao DG, Xu SJ. Strain status in Fe- And Si- doped GaN epilayers grown on sapphire. Photonics for Energy, PFE 2015. 2015.
Published In
Photonics for Energy, PFE 2015
ISBN
9781943580019
Publication Date
January 1, 2015