How to report and benchmark emerging field-effect transistors
The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way.
Duke Scholars
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- 4009 Electronics, sensors and digital hardware
- 4008 Electrical engineering
Citation
Published In
DOI
EISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- 4009 Electronics, sensors and digital hardware
- 4008 Electrical engineering