Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall
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, Journal Article
Herrera, M; Chi, M; Bonds, M; Browning, ND; Woolman, JN; Kvaas, RE; Harris, SF; Rhiger, DR; Hill, CJ
Published in: Applied Physics Letters
September 15, 2008
We have analyzed by electron microscopy techniques the effect of the deposition of a SiO2 passivation layer on an InAs/GaSb type-II superlattice (SL) mesa with applications as a photodetector. Our images reveal good conformal coverage by the SiO2 upon an undulating edge of the SL mesa. However, we have observed scarce As clusters at the interface between the SL mesa and the passivation layer and some degree of oxidation of the mesa sidewall. The strong reduction in surface leakage currents demonstrates that the observed imperfections do not have a substantial detrimental effect on the passivation capabilities of the SiO2 layer. © 2008 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
September 15, 2008
Volume
93
Issue
9
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Herrera, M., Chi, M., Bonds, M., Browning, N. D., Woolman, J. N., Kvaas, R. E., … Hill, C. J. (2008). Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall. Applied Physics Letters, 93(9). https://doi.org/10.1063/1.2977589
Herrera, M., M. Chi, M. Bonds, N. D. Browning, J. N. Woolman, R. E. Kvaas, S. F. Harris, D. R. Rhiger, and C. J. Hill. “Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall.” Applied Physics Letters 93, no. 9 (September 15, 2008). https://doi.org/10.1063/1.2977589.
Herrera M, Chi M, Bonds M, Browning ND, Woolman JN, Kvaas RE, et al. Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall. Applied Physics Letters. 2008 Sep 15;93(9).
Herrera, M., et al. “Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall.” Applied Physics Letters, vol. 93, no. 9, Sept. 2008. Scopus, doi:10.1063/1.2977589.
Herrera M, Chi M, Bonds M, Browning ND, Woolman JN, Kvaas RE, Harris SF, Rhiger DR, Hill CJ. Atomic scale analysis of the effect of the SiO2 passivation treatment on InAs/GaSb superlattice mesa sidewall. Applied Physics Letters. 2008 Sep 15;93(9).
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
September 15, 2008
Volume
93
Issue
9
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences