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Interface structure and transport of complex oxide junctions

Publication ,  Journal Article
Nelson-Cheeseman, BB; Wong, F; Chopdekar, RV; Chi, M; Arenholz, E; Browning, ND; Suzuki, Y
Published in: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
August 25, 2008

The interface structure and magnetism of hybrid magnetic tunnel junction-spin filter devices have been investigated and correlated with their transport properties. Magnetic tunnel junctions made of a spinel Ni Mn2 O4 tunnel barrier sandwiched by theoretically predicted half-metallic electrodes, perovskite La0.7 Sr0.3 Mn O3 and spinel Fe3 O4, exhibit very high crystalline quality as observed by transmission electron microscopy. Structurally abrupt interfaces allow for the distinct magnetic switching of the electrodes as well as large junction magnetoresistance. The change in the magnetic anisotropy observed at the spinel-spinel interface is indicative of a thin interdiffused magnetically soft interfacial layer. The strong exchange coupling at this interface allows for low background magnetoresistance, and a spin-filter effect with when the barrier is ferrimagnetic. © 2008 American Vacuum Society.

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Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

August 25, 2008

Volume

26

Issue

4

Start / End Page

1521 / 1525

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences
 

Citation

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Chicago
ICMJE
MLA
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Nelson-Cheeseman, B. B., Wong, F., Chopdekar, R. V., Chi, M., Arenholz, E., Browning, N. D., & Suzuki, Y. (2008). Interface structure and transport of complex oxide junctions. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 26(4), 1521–1525. https://doi.org/10.1116/1.2956626
Nelson-Cheeseman, B. B., F. Wong, R. V. Chopdekar, M. Chi, E. Arenholz, N. D. Browning, and Y. Suzuki. “Interface structure and transport of complex oxide junctions.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 26, no. 4 (August 25, 2008): 1521–25. https://doi.org/10.1116/1.2956626.
Nelson-Cheeseman BB, Wong F, Chopdekar RV, Chi M, Arenholz E, Browning ND, et al. Interface structure and transport of complex oxide junctions. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2008 Aug 25;26(4):1521–5.
Nelson-Cheeseman, B. B., et al. “Interface structure and transport of complex oxide junctions.” Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 26, no. 4, Aug. 2008, pp. 1521–25. Scopus, doi:10.1116/1.2956626.
Nelson-Cheeseman BB, Wong F, Chopdekar RV, Chi M, Arenholz E, Browning ND, Suzuki Y. Interface structure and transport of complex oxide junctions. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2008 Aug 25;26(4):1521–1525.

Published In

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

DOI

ISSN

1071-1023

Publication Date

August 25, 2008

Volume

26

Issue

4

Start / End Page

1521 / 1525

Related Subject Headings

  • Applied Physics
  • 5104 Condensed matter physics
  • 4016 Materials engineering
  • 0912 Materials Engineering
  • 0901 Aerospace Engineering
  • 0401 Atmospheric Sciences