Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates
Publication
, Journal Article
Lim, ZH; Chrysler, M; Kumar, A; Mauthe, JP; Kumah, DP; Richardson, C; Lebeau, JM; Ngai, JH
Published in: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
January 1, 2020
Wet-etch techniques to realize suspended microscale structures of single-crystalline SrTiO3 and BaTiO3 grown on Si are explored. The authors examine the effects of oxygen vacancies and dislocations on etch rates. Both oxygen vacancies and dislocations enhance etching, yielding rates that are sufficiently high to enable conventional photoresist to serve as a mask layer. Suspended bridge structures are realized by etching the underlying Si substrate using a potassium hydroxide solution. The ability to realize suspended microscale structures using wet-etch techniques that are compatible with standard semiconductor device processing opens a pathway to integrate multifunctional oxides in microelectromechanical systems.
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Published In
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
DOI
EISSN
1520-8559
ISSN
0734-2101
Publication Date
January 1, 2020
Volume
38
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences
Citation
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Lim, Z. H., Chrysler, M., Kumar, A., Mauthe, J. P., Kumah, D. P., Richardson, C., … Ngai, J. H. (2020). Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 38(1). https://doi.org/10.1116/1.5135035
Lim, Z. H., M. Chrysler, A. Kumar, J. P. Mauthe, D. P. Kumah, C. Richardson, J. M. Lebeau, and J. H. Ngai. “Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates.” Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 38, no. 1 (January 1, 2020). https://doi.org/10.1116/1.5135035.
Lim ZH, Chrysler M, Kumar A, Mauthe JP, Kumah DP, Richardson C, et al. Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2020 Jan 1;38(1).
Lim, Z. H., et al. “Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates.” Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 38, no. 1, Jan. 2020. Scopus, doi:10.1116/1.5135035.
Lim ZH, Chrysler M, Kumar A, Mauthe JP, Kumah DP, Richardson C, Lebeau JM, Ngai JH. Suspended single-crystalline oxide structures on silicon through wet-etch techniques: Effects of oxygen vacancies and dislocations on etch rates. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2020 Jan 1;38(1).
Published In
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
DOI
EISSN
1520-8559
ISSN
0734-2101
Publication Date
January 1, 2020
Volume
38
Issue
1
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 09 Engineering
- 02 Physical Sciences