Skip to main content
Journal cover image

Single Atomic Layer Ferroelectric on Silicon.

Publication ,  Journal Article
Dogan, M; Fernandez-Peña, S; Kornblum, L; Jia, Y; Kumah, DP; Reiner, JW; Krivokapic, Z; Kolpak, AM; Ismail-Beigi, S; Ahn, CH; Walker, FJ
Published in: Nano letters
January 2018

A single atomic layer of ZrO2 exhibits ferroelectric switching behavior when grown with an atomically abrupt interface on silicon. Hysteresis in capacitance-voltage measurements of a ZrO2 gate stack demonstrate that a reversible polarization of the ZrO2 interface structure couples to the carriers in the silicon. First-principles computations confirm the existence of multiple stable polarization states and the energy shift in the semiconductor electron states that result from switching between these states. This monolayer ferroelectric represents a new class of materials for achieving devices that transcend conventional complementary metal oxide semiconductor (CMOS) technology. Significantly, a single atomic layer ferroelectric allows for more aggressively scaled devices than bulk ferroelectrics, which currently need to be thicker than 5-10 nm to exhibit significant hysteretic behavior (Park, et al. Adv. Mater. 2015, 27, 1811).

Duke Scholars

Altmetric Attention Stats
Dimensions Citation Stats

Published In

Nano letters

DOI

EISSN

1530-6992

ISSN

1530-6984

Publication Date

January 2018

Volume

18

Issue

1

Start / End Page

241 / 246

Related Subject Headings

  • Nanoscience & Nanotechnology
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Dogan, M., Fernandez-Peña, S., Kornblum, L., Jia, Y., Kumah, D. P., Reiner, J. W., … Walker, F. J. (2018). Single Atomic Layer Ferroelectric on Silicon. Nano Letters, 18(1), 241–246. https://doi.org/10.1021/acs.nanolett.7b03988
Dogan, Mehmet, Stéphanie Fernandez-Peña, Lior Kornblum, Yichen Jia, Divine P. Kumah, James W. Reiner, Zoran Krivokapic, et al. “Single Atomic Layer Ferroelectric on Silicon.Nano Letters 18, no. 1 (January 2018): 241–46. https://doi.org/10.1021/acs.nanolett.7b03988.
Dogan M, Fernandez-Peña S, Kornblum L, Jia Y, Kumah DP, Reiner JW, et al. Single Atomic Layer Ferroelectric on Silicon. Nano letters. 2018 Jan;18(1):241–6.
Dogan, Mehmet, et al. “Single Atomic Layer Ferroelectric on Silicon.Nano Letters, vol. 18, no. 1, Jan. 2018, pp. 241–46. Epmc, doi:10.1021/acs.nanolett.7b03988.
Dogan M, Fernandez-Peña S, Kornblum L, Jia Y, Kumah DP, Reiner JW, Krivokapic Z, Kolpak AM, Ismail-Beigi S, Ahn CH, Walker FJ. Single Atomic Layer Ferroelectric on Silicon. Nano letters. 2018 Jan;18(1):241–246.
Journal cover image

Published In

Nano letters

DOI

EISSN

1530-6992

ISSN

1530-6984

Publication Date

January 2018

Volume

18

Issue

1

Start / End Page

241 / 246

Related Subject Headings

  • Nanoscience & Nanotechnology