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Oxide 2D electron gases as a route for high carrier densities on (001) Si

Publication ,  Journal Article
Kornblum, L; Jin, EN; Kumah, DP; Ernst, AT; Broadbridge, CC; Ahn, CH; Walker, FJ
Published in: Applied Physics Letters
May 18, 2015

Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has the potential to integrate their functionality with semiconductor device technology. We demonstrate 2DEGs on a conventional semiconductor by growing GdTiO3-SrTiO3 on silicon. Structural analysis confirms the epitaxial growth of heterostructures with abrupt interfaces and a high degree of crystallinity. Transport measurements show the conduction to be an interface effect, ∼9 × 1013 cm-2 electrons per interface. Good agreement is demonstrated between the electronic behavior of structures grown on Si and on an oxide substrate, validating the robustness of this approach to bridge between lab-scale samples to a scalable, technologically relevant materials system.

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Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

May 18, 2015

Volume

106

Issue

20

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

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Kornblum, L., Jin, E. N., Kumah, D. P., Ernst, A. T., Broadbridge, C. C., Ahn, C. H., & Walker, F. J. (2015). Oxide 2D electron gases as a route for high carrier densities on (001) Si. Applied Physics Letters, 106(20). https://doi.org/10.1063/1.4921437
Kornblum, L., E. N. Jin, D. P. Kumah, A. T. Ernst, C. C. Broadbridge, C. H. Ahn, and F. J. Walker. “Oxide 2D electron gases as a route for high carrier densities on (001) Si.” Applied Physics Letters 106, no. 20 (May 18, 2015). https://doi.org/10.1063/1.4921437.
Kornblum L, Jin EN, Kumah DP, Ernst AT, Broadbridge CC, Ahn CH, et al. Oxide 2D electron gases as a route for high carrier densities on (001) Si. Applied Physics Letters. 2015 May 18;106(20).
Kornblum, L., et al. “Oxide 2D electron gases as a route for high carrier densities on (001) Si.” Applied Physics Letters, vol. 106, no. 20, May 2015. Scopus, doi:10.1063/1.4921437.
Kornblum L, Jin EN, Kumah DP, Ernst AT, Broadbridge CC, Ahn CH, Walker FJ. Oxide 2D electron gases as a route for high carrier densities on (001) Si. Applied Physics Letters. 2015 May 18;106(20).

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

May 18, 2015

Volume

106

Issue

20

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences