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Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

Publication ,  Journal Article
Kumah, DP; Wu, JH; Husseini, NS; Dasika, VD; Goldman, RS; Yacoby, Y; Clarke, R
Published in: Applied Physics Letters
January 10, 2011

We report on the use of a direct x-ray phase retrieval method, coherent Bragg rod analysis, to characterize self-assembled InAs quantum dots (QDs) grown epitaxially on GaAs substrates. Electron density maps obtained close to the x-ray absorption edges of the constituent elements are compared to deconvolute composition and atomic spacing information. Our measurements show no evidence of a wetting layer and reveal bowing of the atomic layers throughout the QD, extending from the QD-substrate interface. This leads to a half-layer stacking shift which may act to partially decouple the QDs electronically from the substrate. © 2011 American Institute of Physics.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

January 10, 2011

Volume

98

Issue

2

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Kumah, D. P., Wu, J. H., Husseini, N. S., Dasika, V. D., Goldman, R. S., Yacoby, Y., & Clarke, R. (2011). Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs. Applied Physics Letters, 98(2). https://doi.org/10.1063/1.3535984
Kumah, D. P., J. H. Wu, N. S. Husseini, V. D. Dasika, R. S. Goldman, Y. Yacoby, and R. Clarke. “Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs.” Applied Physics Letters 98, no. 2 (January 10, 2011). https://doi.org/10.1063/1.3535984.
Kumah DP, Wu JH, Husseini NS, Dasika VD, Goldman RS, Yacoby Y, et al. Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs. Applied Physics Letters. 2011 Jan 10;98(2).
Kumah, D. P., et al. “Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs.” Applied Physics Letters, vol. 98, no. 2, Jan. 2011. Scopus, doi:10.1063/1.3535984.
Kumah DP, Wu JH, Husseini NS, Dasika VD, Goldman RS, Yacoby Y, Clarke R. Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs. Applied Physics Letters. 2011 Jan 10;98(2).

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

January 10, 2011

Volume

98

Issue

2

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences