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Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide

Publication ,  Journal Article
Al-Tawhid, AH; Kanter, J; Hatefipour, M; Irving, DL; Kumah, DP; Shabani, J; Ahadi, K
Published in: Journal of Electronic Materials
December 1, 2022

The anomalous Hall effect, a hallmark of broken time-reversal symmetry and spin–orbit coupling, is frequently observed in magnetically polarized systems. However, its realization in nominally non-magnetic systems remains elusive. Here, we report on the observation of the anomalous Hall effect in nominally non-magnetic KTaO3. Anomalous Hall effect emerges in reduced KTaO3 and shows an extrinsic to intrinsic crossover. A paramagnetic behavior is observed in reduced samples and confirmed using first principles calculations. The observed anomalous Hall effect follows the oxygen vacancy-induced magnetization response, suggesting that the localized magnetic moments of the oxygen vacancies scatter conduction electrons asymmetrically and give rise to the anomalous Hall effect. The anomalous Hall conductivity is found to be insensitive to the scattering rate in the low temperature limit (T < 5 K), implying that the Berry curvature of the electrons on the Fermi surface controls the anomalous Hall effect. Our observations provide a detailed picture of many-body interactions, which trigger the anomalous Hall effect in a non-magnetic system.

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Published In

Journal of Electronic Materials

DOI

EISSN

1543-186X

ISSN

0361-5235

Publication Date

December 1, 2022

Volume

51

Issue

12

Start / End Page

7073 / 7077

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

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MLA
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Al-Tawhid, A. H., Kanter, J., Hatefipour, M., Irving, D. L., Kumah, D. P., Shabani, J., & Ahadi, K. (2022). Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide. Journal of Electronic Materials, 51(12), 7073–7077. https://doi.org/10.1007/s11664-022-09941-9
Al-Tawhid, A. H., J. Kanter, M. Hatefipour, D. L. Irving, D. P. Kumah, J. Shabani, and K. Ahadi. “Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide.” Journal of Electronic Materials 51, no. 12 (December 1, 2022): 7073–77. https://doi.org/10.1007/s11664-022-09941-9.
Al-Tawhid AH, Kanter J, Hatefipour M, Irving DL, Kumah DP, Shabani J, et al. Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide. Journal of Electronic Materials. 2022 Dec 1;51(12):7073–7.
Al-Tawhid, A. H., et al. “Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide.” Journal of Electronic Materials, vol. 51, no. 12, Dec. 2022, pp. 7073–77. Scopus, doi:10.1007/s11664-022-09941-9.
Al-Tawhid AH, Kanter J, Hatefipour M, Irving DL, Kumah DP, Shabani J, Ahadi K. Oxygen Vacancy-Induced Anomalous Hall Effect in a Nominally Non-magnetic Oxide. Journal of Electronic Materials. 2022 Dec 1;51(12):7073–7077.
Journal cover image

Published In

Journal of Electronic Materials

DOI

EISSN

1543-186X

ISSN

0361-5235

Publication Date

December 1, 2022

Volume

51

Issue

12

Start / End Page

7073 / 7077

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics