Fermi Velocity Dependent Critical Current in Ballistic Bilayer Graphene Josephson Junctions.
We perform transport measurements on proximitized, ballistic, bilayer graphene Josephson junctions (BGJJs) in the intermediate-to-long junction regime (L > ξ). We measure the device's differential resistance as a function of bias current and gate voltage for a range of different temperatures. The extracted critical current IC follows an exponential trend with temperature: exp(-kBT/δE). Here δE = ℏν F /2πL: an expected trend for intermediate-to-long junctions. From δE, we determine the Fermi velocity of the bilayer graphene, which is found to increase with gate voltage. Simultaneously, we show the carrier density dependence of δE, which is attributed to the quadratic dispersion of bilayer graphene. This is in contrast to single layer graphene Josephson junctions, where δE and the Fermi velocity are independent of the carrier density. The carrier density dependence in BGJJs allows for additional tuning parameters in graphene-based Josephson junction devices.
