Increasing the lifetime of avalanche transistors by cryogenic cooling
Publication
, Journal Article
Bostanjoglo, O; Tornow, W
Published in: Semiconductor Science and Technology
December 1, 1987
Operating the transistors 2N 5551 in the high voltage avalanche mode at 77 K increases their lifetime by a factor of at least 30. This improvement is due to an increased charged carrier mobility and thermal diffusivity at low temperatures which results in a substantial reduction of charge storage time tau (77 K)/ tau (300 K) approximately=(50 ns)/(450 ns) and efficient thermal sinking. Negative effects of cooling are a decrease in the collector-base breakdown voltage Vb(77 K)/Vb(300 K) approximately=(300 V)/(380 V) and an increase in the base-emitter threshold voltage from 0.6 V at 300 K to 1.0 V at 77 K.
Duke Scholars
Published In
Semiconductor Science and Technology
DOI
ISSN
0268-1242
Publication Date
December 1, 1987
Volume
2
Issue
3
Start / End Page
175 / 176
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Bostanjoglo, O., & Tornow, W. (1987). Increasing the lifetime of avalanche transistors by cryogenic cooling. Semiconductor Science and Technology, 2(3), 175–176. https://doi.org/10.1088/0268-1242/2/3/007
Bostanjoglo, O., and W. Tornow. “Increasing the lifetime of avalanche transistors by cryogenic cooling.” Semiconductor Science and Technology 2, no. 3 (December 1, 1987): 175–76. https://doi.org/10.1088/0268-1242/2/3/007.
Bostanjoglo O, Tornow W. Increasing the lifetime of avalanche transistors by cryogenic cooling. Semiconductor Science and Technology. 1987 Dec 1;2(3):175–6.
Bostanjoglo, O., and W. Tornow. “Increasing the lifetime of avalanche transistors by cryogenic cooling.” Semiconductor Science and Technology, vol. 2, no. 3, Dec. 1987, pp. 175–76. Scopus, doi:10.1088/0268-1242/2/3/007.
Bostanjoglo O, Tornow W. Increasing the lifetime of avalanche transistors by cryogenic cooling. Semiconductor Science and Technology. 1987 Dec 1;2(3):175–176.
Published In
Semiconductor Science and Technology
DOI
ISSN
0268-1242
Publication Date
December 1, 1987
Volume
2
Issue
3
Start / End Page
175 / 176
Related Subject Headings
- Applied Physics
- 5104 Condensed matter physics
- 4009 Electronics, sensors and digital hardware
- 0912 Materials Engineering
- 0906 Electrical and Electronic Engineering
- 0204 Condensed Matter Physics