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Nonlinear transient response of extrinsic Ge far-infrared photoconductors

Publication ,  Journal Article
Westervelt, RM; Teitsworth, SW
Published in: Journal of Applied Physics
December 1, 1985

Physical mechanisms responsible for nonlinear phenomena and anomalous transient response of cooled extrinsic far-infrared photoconductors are discussed. A simple model describing carrier generation, trapping, and impact ionization is presented, which describes the transient response on fast time scales 10-3 to 10-4 sec, neglecting changes in space charge. Carrier heating by a dc electric field produces relatively fast, damped oscillatory response to external excitation. A small-signal analysis of these equations is a test of stability. An analysis of the role of ideal electrical contacts and space charge is also presented. The very slow (∼1 sec) overshoot and transient response commonly observed in cooled extrinsic photoconductors is explained by the dynamics of trapped space charge near the injecting electrical contact. A small-signal analysis determines the characteristic time constants for these processes, which are typically ∼1 sec. Calculated examples of the recombination and ionization coefficients, dc I-V curves, differential equation flow diagrams, and transient response are presented for parameters typical of p-type Ge photoconductors doped with shallow acceptor levels, and suggestions for the design of more stable photoconductors are presented.

Duke Scholars

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1985

Volume

57

Issue

12

Start / End Page

5457 / 5469

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences
 

Citation

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Westervelt, R. M., & Teitsworth, S. W. (1985). Nonlinear transient response of extrinsic Ge far-infrared photoconductors. Journal of Applied Physics, 57(12), 5457–5469. https://doi.org/10.1063/1.334822
Westervelt, R. M., and S. W. Teitsworth. “Nonlinear transient response of extrinsic Ge far-infrared photoconductors.” Journal of Applied Physics 57, no. 12 (December 1, 1985): 5457–69. https://doi.org/10.1063/1.334822.
Westervelt RM, Teitsworth SW. Nonlinear transient response of extrinsic Ge far-infrared photoconductors. Journal of Applied Physics. 1985 Dec 1;57(12):5457–69.
Westervelt, R. M., and S. W. Teitsworth. “Nonlinear transient response of extrinsic Ge far-infrared photoconductors.” Journal of Applied Physics, vol. 57, no. 12, Dec. 1985, pp. 5457–69. Scopus, doi:10.1063/1.334822.
Westervelt RM, Teitsworth SW. Nonlinear transient response of extrinsic Ge far-infrared photoconductors. Journal of Applied Physics. 1985 Dec 1;57(12):5457–5469.
Journal cover image

Published In

Journal of Applied Physics

DOI

ISSN

0021-8979

Publication Date

December 1, 1985

Volume

57

Issue

12

Start / End Page

5457 / 5469

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 49 Mathematical sciences
  • 40 Engineering
  • 09 Engineering
  • 02 Physical Sciences
  • 01 Mathematical Sciences