Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors
Publication
, Journal Article
Stanton, CJ; Baranger, HU; Wilkins, JW
Published in: Applied Physics Letters
December 1, 1986
We present results for the negative differential mobility and the distribution function in GaAs and InP for electric fields less than 40 kV/cm based on the analytic solution of the Boltzmann equation for a model with two valleys and three relaxation times. Using the measured low field mobility, lower valley mass, and valley separation energy Δ while adjusting three upper valley parameters, we obtain good agreement with the experimental velocity-field curves. The distribution function in the lower valley shows structure at energies ≊Δ due to the intervalley scattering.
Duke Scholars
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1986
Volume
49
Issue
3
Start / End Page
176 / 178
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Stanton, C. J., Baranger, H. U., & Wilkins, J. W. (1986). Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors. Applied Physics Letters, 49(3), 176–178. https://doi.org/10.1063/1.97216
Stanton, C. J., H. U. Baranger, and J. W. Wilkins. “Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors.” Applied Physics Letters 49, no. 3 (December 1, 1986): 176–78. https://doi.org/10.1063/1.97216.
Stanton CJ, Baranger HU, Wilkins JW. Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors. Applied Physics Letters. 1986 Dec 1;49(3):176–8.
Stanton, C. J., et al. “Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors.” Applied Physics Letters, vol. 49, no. 3, Dec. 1986, pp. 176–78. Scopus, doi:10.1063/1.97216.
Stanton CJ, Baranger HU, Wilkins JW. Analytic Boltzmann equation approach for negative differential mobility in two-valley semiconductors. Applied Physics Letters. 1986 Dec 1;49(3):176–178.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1986
Volume
49
Issue
3
Start / End Page
176 / 178
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences