Quantum size effect in monolayer-doped heterostructures
Publication
, Journal Article
Cunningham, JE; Tsang, WT; Timp, G; Schubert, EF; Chang, AM; Owusu-Sekyere, K
Published in: Physical Review B
January 1, 1988
We report molecular-beam-epitaxial growth of a new structure formed by monolayer doping the barrier of an AlxGa1-xAs-GaAs heterojunction. Our investigations of these structures include the quantum Hall effect and variable temperature mobility measurements, which reveal enhancements in interface densities are achievable along with very high mobility. © 1988 The American Physical Society.
Duke Scholars
Published In
Physical Review B
DOI
ISSN
0163-1829
Publication Date
January 1, 1988
Volume
37
Issue
8
Start / End Page
4317 / 4320
Citation
APA
Chicago
ICMJE
MLA
NLM
Cunningham, J. E., Tsang, W. T., Timp, G., Schubert, E. F., Chang, A. M., & Owusu-Sekyere, K. (1988). Quantum size effect in monolayer-doped heterostructures. Physical Review B, 37(8), 4317–4320. https://doi.org/10.1103/PhysRevB.37.4317
Cunningham, J. E., W. T. Tsang, G. Timp, E. F. Schubert, A. M. Chang, and K. Owusu-Sekyere. “Quantum size effect in monolayer-doped heterostructures.” Physical Review B 37, no. 8 (January 1, 1988): 4317–20. https://doi.org/10.1103/PhysRevB.37.4317.
Cunningham JE, Tsang WT, Timp G, Schubert EF, Chang AM, Owusu-Sekyere K. Quantum size effect in monolayer-doped heterostructures. Physical Review B. 1988 Jan 1;37(8):4317–20.
Cunningham, J. E., et al. “Quantum size effect in monolayer-doped heterostructures.” Physical Review B, vol. 37, no. 8, Jan. 1988, pp. 4317–20. Scopus, doi:10.1103/PhysRevB.37.4317.
Cunningham JE, Tsang WT, Timp G, Schubert EF, Chang AM, Owusu-Sekyere K. Quantum size effect in monolayer-doped heterostructures. Physical Review B. 1988 Jan 1;37(8):4317–4320.
Published In
Physical Review B
DOI
ISSN
0163-1829
Publication Date
January 1, 1988
Volume
37
Issue
8
Start / End Page
4317 / 4320