Quantum transport in quasi-one-dimensional GaAsAlx Ga1-x As heterostructure devices
Publication
, Journal Article
Chang, AM; Timp, G; Howard, RE; Behringer, RE; Mankeiwich, PM; Cunningham, JE; Chang, TY; Chelluri, B
Published in: Superlattices and Microstructures
January 1, 1988
We study quantum transport properties of narrow GaAsAlxGa1-xAs wires and rings made by electron beam lithography. At low temperatures, clear signatures of Ah́aronov-Bohm quantum interference effects are observed due to the application of a perpendicular magnetic field. The ring devices show large amplitude (-5%) resistance oscillations periodic in magnetic flux penetrating the ring, which diminish in amplitude above -3kG. The wire devices show aperiodic resistance fluctuations as large as 100%, which persist into the quantum Hall regime. The large amplitudes observed result from the small number of transverse channels occupied below the Fermi level. © 1988.
Duke Scholars
Published In
Superlattices and Microstructures
DOI
EISSN
1096-3677
ISSN
0749-6036
Publication Date
January 1, 1988
Volume
4
Issue
4-5
Start / End Page
515 / 520
Related Subject Headings
- Applied Physics
- 0206 Quantum Physics
- 0205 Optical Physics
- 0204 Condensed Matter Physics
Citation
APA
Chicago
ICMJE
MLA
NLM
Chang, A. M., Timp, G., Howard, R. E., Behringer, R. E., Mankeiwich, P. M., Cunningham, J. E., … Chelluri, B. (1988). Quantum transport in quasi-one-dimensional GaAsAlx Ga1-x As heterostructure devices. Superlattices and Microstructures, 4(4–5), 515–520. https://doi.org/10.1016/0749-6036(88)90229-7
Chang, A. M., G. Timp, R. E. Howard, R. E. Behringer, P. M. Mankeiwich, J. E. Cunningham, T. Y. Chang, and B. Chelluri. “Quantum transport in quasi-one-dimensional GaAsAlx Ga1-x As heterostructure devices.” Superlattices and Microstructures 4, no. 4–5 (January 1, 1988): 515–20. https://doi.org/10.1016/0749-6036(88)90229-7.
Chang AM, Timp G, Howard RE, Behringer RE, Mankeiwich PM, Cunningham JE, et al. Quantum transport in quasi-one-dimensional GaAsAlx Ga1-x As heterostructure devices. Superlattices and Microstructures. 1988 Jan 1;4(4–5):515–20.
Chang, A. M., et al. “Quantum transport in quasi-one-dimensional GaAsAlx Ga1-x As heterostructure devices.” Superlattices and Microstructures, vol. 4, no. 4–5, Jan. 1988, pp. 515–20. Scopus, doi:10.1016/0749-6036(88)90229-7.
Chang AM, Timp G, Howard RE, Behringer RE, Mankeiwich PM, Cunningham JE, Chang TY, Chelluri B. Quantum transport in quasi-one-dimensional GaAsAlx Ga1-x As heterostructure devices. Superlattices and Microstructures. 1988 Jan 1;4(4–5):515–520.
Published In
Superlattices and Microstructures
DOI
EISSN
1096-3677
ISSN
0749-6036
Publication Date
January 1, 1988
Volume
4
Issue
4-5
Start / End Page
515 / 520
Related Subject Headings
- Applied Physics
- 0206 Quantum Physics
- 0205 Optical Physics
- 0204 Condensed Matter Physics