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Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures

Publication ,  Journal Article
Zheng, HZ; Tsui, DC; Chang, AM
Published in: Physical Review B
January 1, 1985

We report measurements of the Hall potential distribution in the interior of the two-dimensional electron gas in GaAs-AlxGa1-xAs heterostructures. In the quantized Hall regime, our data provide direct evidence for the existence of extended states in the bulk of a two-dimensional system. Bunching of the potential distribution is observed as a function of the quantizing magnetic field and is attributed to the presence of density gradients as the dominant macroscopic inhomogeneities. © 1985 The American Physical Society.

Duke Scholars

Published In

Physical Review B

DOI

ISSN

0163-1829

Publication Date

January 1, 1985

Volume

32

Issue

8

Start / End Page

5506 / 5509
 

Citation

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Zheng, H. Z., Tsui, D. C., & Chang, A. M. (1985). Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures. Physical Review B, 32(8), 5506–5509. https://doi.org/10.1103/PhysRevB.32.5506
Zheng, H. Z., D. C. Tsui, and A. M. Chang. “Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures.” Physical Review B 32, no. 8 (January 1, 1985): 5506–9. https://doi.org/10.1103/PhysRevB.32.5506.
Zheng HZ, Tsui DC, Chang AM. Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures. Physical Review B. 1985 Jan 1;32(8):5506–9.
Zheng, H. Z., et al. “Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures.” Physical Review B, vol. 32, no. 8, Jan. 1985, pp. 5506–09. Scopus, doi:10.1103/PhysRevB.32.5506.
Zheng HZ, Tsui DC, Chang AM. Distribution of the quantized Hall potential in GaAs-AlxGa1-xAs heterostructures. Physical Review B. 1985 Jan 1;32(8):5506–5509.

Published In

Physical Review B

DOI

ISSN

0163-1829

Publication Date

January 1, 1985

Volume

32

Issue

8

Start / End Page

5506 / 5509