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Fractional quantum hall effect at low temperatures

Publication ,  Journal Article
Chang, AM; Paalanen, MA; Störmer, HL; Hwang, JCM; Tsui, DC
Published in: Surface Science
July 1, 1984

We report results of low temperature (65 mK to 770 mK) magneto-transport measurements of the 2 3 quantum Hall plateau in an n-type GaAsAlxGa1-x As heterostructure. Both the diagonal resistivity ρ{variant}xx and the deviation of the Hall resistivity ρ{variant}xy, from the quantized value show thermally activated behavior. The thermal activation energy was measured as a function of the Landau level filling factor, ν, at fixed magnetic fields, B, by varying the density of the two-dimensional electrons with a back-gate bias. The activation energy Δ of ρ{variant}xx is maximum at the center of the Hall plateau, when ν = 2 3, and decreases on either side of it, as ν moves away from 2 3. This resonance-like dependence on ν is characterized by a maximum activation energy, Δm = 830 mK and Δν ν = 8% at B = 92.5 kG. In addition, we have verified that the Hall conductance is quantized to ( 2 3) e2 h to an accuracy of 3 parts in 104. The I-V relation is linear down to an electric field of less than 10 -5 V cm, indicating that the current carrying state is not pinned. © 1984.

Duke Scholars

Published In

Surface Science

DOI

ISSN

0039-6028

Publication Date

July 1, 1984

Volume

142

Issue

1-3

Start / End Page

173 / 178

Related Subject Headings

  • Chemical Physics
  • 5108 Quantum physics
  • 5104 Condensed matter physics
  • 3406 Physical chemistry
  • 0306 Physical Chemistry (incl. Structural)
  • 0206 Quantum Physics
  • 0204 Condensed Matter Physics
 

Citation

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Chang, A. M., Paalanen, M. A., Störmer, H. L., Hwang, J. C. M., & Tsui, D. C. (1984). Fractional quantum hall effect at low temperatures. Surface Science, 142(1–3), 173–178. https://doi.org/10.1016/0039-6028(84)90302-9
Chang, A. M., M. A. Paalanen, H. L. Störmer, J. C. M. Hwang, and D. C. Tsui. “Fractional quantum hall effect at low temperatures.” Surface Science 142, no. 1–3 (July 1, 1984): 173–78. https://doi.org/10.1016/0039-6028(84)90302-9.
Chang AM, Paalanen MA, Störmer HL, Hwang JCM, Tsui DC. Fractional quantum hall effect at low temperatures. Surface Science. 1984 Jul 1;142(1–3):173–8.
Chang, A. M., et al. “Fractional quantum hall effect at low temperatures.” Surface Science, vol. 142, no. 1–3, July 1984, pp. 173–78. Scopus, doi:10.1016/0039-6028(84)90302-9.
Chang AM, Paalanen MA, Störmer HL, Hwang JCM, Tsui DC. Fractional quantum hall effect at low temperatures. Surface Science. 1984 Jul 1;142(1–3):173–178.
Journal cover image

Published In

Surface Science

DOI

ISSN

0039-6028

Publication Date

July 1, 1984

Volume

142

Issue

1-3

Start / End Page

173 / 178

Related Subject Headings

  • Chemical Physics
  • 5108 Quantum physics
  • 5104 Condensed matter physics
  • 3406 Physical chemistry
  • 0306 Physical Chemistry (incl. Structural)
  • 0206 Quantum Physics
  • 0204 Condensed Matter Physics