Low-Frequency Noise Statistics for the Breakdown Characterization of Ultrathin Gate Oxides
Publication
, Journal Article
Butt, NZ; Chang, AM; Raza, H; Bashir, R; Liu, J; Kwong, DL
Published in: Applied Physics Letters
2006
Duke Scholars
Published In
Applied Physics Letters
Publication Date
2006
Volume
88
Issue
11
Start / End Page
112901
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Butt, N. Z., Chang, A. M., Raza, H., Bashir, R., Liu, J., & Kwong, D. L. (2006). Low-Frequency Noise Statistics for the Breakdown Characterization of Ultrathin Gate Oxides. Applied Physics Letters, 88(11), 112901.
Butt, N. Z., A. M. Chang, H. Raza, R. Bashir, J. Liu, and D. L. Kwong. “Low-Frequency Noise Statistics for the Breakdown Characterization of Ultrathin Gate Oxides.” Applied Physics Letters 88, no. 11 (2006): 112901.
Butt NZ, Chang AM, Raza H, Bashir R, Liu J, Kwong DL. Low-Frequency Noise Statistics for the Breakdown Characterization of Ultrathin Gate Oxides. Applied Physics Letters. 2006;88(11):112901.
Butt, N. Z., et al. “Low-Frequency Noise Statistics for the Breakdown Characterization of Ultrathin Gate Oxides.” Applied Physics Letters, vol. 88, no. 11, 2006, p. 112901.
Butt NZ, Chang AM, Raza H, Bashir R, Liu J, Kwong DL. Low-Frequency Noise Statistics for the Breakdown Characterization of Ultrathin Gate Oxides. Applied Physics Letters. 2006;88(11):112901.
Published In
Applied Physics Letters
Publication Date
2006
Volume
88
Issue
11
Start / End Page
112901
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences