The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature
Hydrogenated amorphous boron thin films have been produced on quartz substrates heated to 150, 250, and 350°C by the glow discharge decomposition of a gas mixture of 5 v/o BoHg and 95 v/o H2. Doped films have also been prepared by the addition of 1 a/o C2H4 or 0.5 a/o SiH4. The absorp-tion coefficients as a function of wavelength across the visible spectrum and the concomitant optical band gaps of all films were measured. The optical band gaps of the films produced at 150 and 250°C were approximately 2.1 eV while those films produced at 350°C showed band gaps between 1.6 and 1.4 eV. These results indicate that it is possible to optimize theroretical photovoltaic conversion efficiencies of solar cells based on hydrogenated amorphous boron thin films produced by glow discharge methods through the tailor-ing of the optical band gap by control of substrate temper-ature. © 1981 AIME.
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- Applied Physics
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- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
Citation
Published In
DOI
EISSN
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 34 Chemical sciences
- 1099 Other Technology
- 0906 Electrical and Electronic Engineering
- 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics