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The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature

Publication ,  Journal Article
Dimmey, LJ; Park, H; Jones, PL; Cocks, FH
Published in: Journal of Electronic Materials
January 1, 1981

Hydrogenated amorphous boron thin films have been produced on quartz substrates heated to 150, 250, and 350°C by the glow discharge decomposition of a gas mixture of 5 v/o BoHg and 95 v/o H2. Doped films have also been prepared by the addition of 1 a/o C2H4 or 0.5 a/o SiH4. The absorp-tion coefficients as a function of wavelength across the visible spectrum and the concomitant optical band gaps of all films were measured. The optical band gaps of the films produced at 150 and 250°C were approximately 2.1 eV while those films produced at 350°C showed band gaps between 1.6 and 1.4 eV. These results indicate that it is possible to optimize theroretical photovoltaic conversion efficiencies of solar cells based on hydrogenated amorphous boron thin films produced by glow discharge methods through the tailor-ing of the optical band gap by control of substrate temper-ature. © 1981 AIME.

Duke Scholars

Published In

Journal of Electronic Materials

DOI

EISSN

1543-186X

ISSN

0361-5235

Publication Date

January 1, 1981

Volume

10

Issue

1

Start / End Page

111 / 117

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
 

Citation

APA
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ICMJE
MLA
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Dimmey, L. J., Park, H., Jones, P. L., & Cocks, F. H. (1981). The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature. Journal of Electronic Materials, 10(1), 111–117. https://doi.org/10.1007/BF02654904
Dimmey, L. J., H. Park, P. L. Jones, and F. H. Cocks. “The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature.” Journal of Electronic Materials 10, no. 1 (January 1, 1981): 111–17. https://doi.org/10.1007/BF02654904.
Dimmey LJ, Park H, Jones PL, Cocks FH. The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature. Journal of Electronic Materials. 1981 Jan 1;10(1):111–7.
Dimmey, L. J., et al. “The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature.” Journal of Electronic Materials, vol. 10, no. 1, Jan. 1981, pp. 111–17. Scopus, doi:10.1007/BF02654904.
Dimmey LJ, Park H, Jones PL, Cocks FH. The optical band gap of hydrogenated amorphous boron thin films: The effect of substrate temperature. Journal of Electronic Materials. 1981 Jan 1;10(1):111–117.
Journal cover image

Published In

Journal of Electronic Materials

DOI

EISSN

1543-186X

ISSN

0361-5235

Publication Date

January 1, 1981

Volume

10

Issue

1

Start / End Page

111 / 117

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 34 Chemical sciences
  • 1099 Other Technology
  • 0906 Electrical and Electronic Engineering
  • 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics