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Observation of light-induced current from a porous silicon device

Publication ,  Journal Article
Zimmermann, H; Cocks, FH; Gösele, U
Published in: Materials Chemistry and Physics
January 1, 1992

Many technological and scientific applications of porous silicon arise from its unique properties, which include photoluminescence and electroluminescence. Here we report for the first time the observation of a photocurrent from a micro-porous silicon device. The wavelength dependence of the photocurrent from the porous silicon device is shown and compared to the photoluminescence spectrum. A high-concentration phosphorus profile between a metal layer and a layer of p-type porous silicon is used to form an electrical contact to the porous p-type silicon. The phosphorus profile results in a n-type porous layer and in a p/n-junction in the porous silicon. The resulting n+/p-structure possesses a much lower electrical resistance than a metal contact directly on p-type porous silicon. The current voltage characteristic of the device shows ohmic current limitation. © 1992.

Duke Scholars

Published In

Materials Chemistry and Physics

DOI

ISSN

0254-0584

Publication Date

January 1, 1992

Volume

32

Issue

3

Start / End Page

310 / 314

Related Subject Headings

  • Materials
  • 4016 Materials engineering
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0303 Macromolecular and Materials Chemistry
 

Citation

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Zimmermann, H., Cocks, F. H., & Gösele, U. (1992). Observation of light-induced current from a porous silicon device. Materials Chemistry and Physics, 32(3), 310–314. https://doi.org/10.1016/0254-0584(92)90216-U
Zimmermann, H., F. H. Cocks, and U. Gösele. “Observation of light-induced current from a porous silicon device.” Materials Chemistry and Physics 32, no. 3 (January 1, 1992): 310–14. https://doi.org/10.1016/0254-0584(92)90216-U.
Zimmermann H, Cocks FH, Gösele U. Observation of light-induced current from a porous silicon device. Materials Chemistry and Physics. 1992 Jan 1;32(3):310–4.
Zimmermann, H., et al. “Observation of light-induced current from a porous silicon device.” Materials Chemistry and Physics, vol. 32, no. 3, Jan. 1992, pp. 310–14. Scopus, doi:10.1016/0254-0584(92)90216-U.
Zimmermann H, Cocks FH, Gösele U. Observation of light-induced current from a porous silicon device. Materials Chemistry and Physics. 1992 Jan 1;32(3):310–314.
Journal cover image

Published In

Materials Chemistry and Physics

DOI

ISSN

0254-0584

Publication Date

January 1, 1992

Volume

32

Issue

3

Start / End Page

310 / 314

Related Subject Headings

  • Materials
  • 4016 Materials engineering
  • 1007 Nanotechnology
  • 0912 Materials Engineering
  • 0303 Macromolecular and Materials Chemistry