RTD/CMOS Nanoelectronic Circuits: Thin-Film InP-Based Resonant Tunneling Diodes Integrated with CMOS Circuits

The combination of resonant tunneling diodes (RTD's) and complementary metal-oxide-semiconductor (CMOS) silicon circuitry can offer substantial improvement in speed, power dissipation, and circuit complexity over CMOS-only circuits. We demonstrate the first integrated resonant tunneling CMOS circuit, a clocked 1-bit comparator with a device count of six, compared with 21 in a comparable all-CMOS design. A hybrid integration process is developed for InP-based RTD's which are transferred and bonded to CMOS chips. The prototype comparator shows sensitivity in excess of 106 V/A, and achieves error-free performance in functionality testing. An optimized integration process, under development, can yield high-speed, low power circuits by lowering the high parasitic capacitance associated with the prototype circuit.

Duke Scholars

Author Nan Marie Jokerst Electrical and Computer Engineering

Author Martin A. Brooke Electrical and Computer Engineering