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Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates

Publication ,  Journal Article
Evers, N; Vendier, O; Chun, C; Murti, MR; Laskar, J; Jokerst, NM; Moise, TS; Kao, YC
Published in: IEEE Electron Device Letters
September 1, 1996
Published version (DOI)

We report high peak-to-valley current ratio (PVR) resonant tunneling diodes (RTD's) bonded to silicon. Pseudomorphic AlAs/In0.53 Ga0.47As/InAs resonant tunneling diode structures grown on semi-insulating InP with peak-to-valley current ratios as high as 30 at 300 K have been separated from the growth substrate and bonded to silicon substrates coated with Si3N4, forming thin film devices. In addition, thin film multiple stack RTD structures have been bonded to silicon substrates. The I-V characteristics of both the single and multi-stacked thin film RTD's exhibit no signs of dergradation after bonding to the host substrate. These results are the first successful demonstration of Inp bases electronics bonded to a silicon host substrate and enable the integration of RTD'S with conventional silicon circuitry.

Duke Scholars

Nan Marie Jokerst
Author Nan Marie Jokerst Electrical and Computer Engineering

Published In

IEEE Electron Device Letters

DOI

10.1109/55.536287

ISSN

0741-3106

Publication Date

September 1, 1996

Volume

17

Issue

9

Start / End Page

443 / 445

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering
 

Citation

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Evers, N., Vendier, O., Chun, C., Murti, M. R., Laskar, J., Jokerst, N. M., … Kao, Y. C. (1996). Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates. IEEE Electron Device Letters, 17(9), 443–445. https://doi.org/10.1109/55.536287
Evers, N., O. Vendier, C. Chun, M. R. Murti, J. Laskar, N. M. Jokerst, T. S. Moise, and Y. C. Kao. “Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates.” IEEE Electron Device Letters 17, no. 9 (September 1, 1996): 443–45. https://doi.org/10.1109/55.536287.
Evers N, Vendier O, Chun C, Murti MR, Laskar J, Jokerst NM, et al. Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates. IEEE Electron Device Letters. 1996 Sep 1;17(9):443–5.
Evers, N., et al. “Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates.” IEEE Electron Device Letters, vol. 17, no. 9, Sept. 1996, pp. 443–45. Scopus, doi:10.1109/55.536287.
Evers N, Vendier O, Chun C, Murti MR, Laskar J, Jokerst NM, Moise TS, Kao YC. Thin film pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes integrated onto Si substrates. IEEE Electron Device Letters. 1996 Sep 1;17(9):443–445.

Published In

IEEE Electron Device Letters

DOI

10.1109/55.536287

ISSN

0741-3106

Publication Date

September 1, 1996

Volume

17

Issue

9

Start / End Page

443 / 445

Related Subject Headings

  • Applied Physics
  • 4009 Electronics, sensors and digital hardware
  • 0906 Electrical and Electronic Engineering