Vertical Optical Communication Through Stacked Silicon Wafers Using Hybrid Monolithic Thin Film InGaAsP Emitters and Detectors
Optical communication through stacked silicon wafers has been demonstrated for the first time using hybrid monolithic thin film InP/InGaAsP light emitting diodes and double heterostructure p-i-n photodetectors operating at λ = 13 μm,. A modified epitaxial liftoff technique was employed to align and deposit an emitter on a nitride coated, polished silicon wafer and to similarly deposit a detector on an identical silicon wafer. These wafers were then stacked with the emitter and detector aligned to demonstrate optical communication through stacked silicon wafers. This inexpensive and manufacturable three-dimensional optical interconnection scheme is a promising technology for implementation of massively parallel signal processing systems. © 1993 IEEE
Duke Scholars
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- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics
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Published In
DOI
EISSN
ISSN
Publication Date
Volume
Issue
Start / End Page
Related Subject Headings
- Optoelectronics & Photonics
- 5102 Atomic, molecular and optical physics
- 4006 Communications engineering
- 0906 Electrical and Electronic Engineering
- 0205 Optical Physics