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Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures

Publication ,  Journal Article
Cha, C; Kim, JH; Huang, Z; Jokerst, NM; Brooke, MA
Published in: Proceedings of SPIE - The International Society for Optical Engineering
August 16, 2004

Photodetectors (PDs) are an important active device in optoelectronic integrated circuits (OEICs), and, for shorter haul interconnections where circuit (e.g. transimpedance amplifier (TIA)) noise may be the dominant noise in receivers, metal-semiconductor-metal photodiodes (MSM PDs) are attractive due to their low capacitance per unit area compared to PIN photodetectors and the ease of monolithic integration with field effect transistors (FETs). Inverted-MSM PDs (I-MSM PDs), which are thin film MSM PDs with the fingers on the bottom of the device, have demonstrated higher responsivities compared to conventional MSM PDs while maintaining small capacitance per unit area, low dark current (∼nA), and high speed. However, the modeling of MSM PDs and I-MSM PDs for insertion into circuit simulators for integrated PD/TIA modeling has not been reported. In this paper, an accurate high-frequency equivalent circuit-level model of thin film I-MSM PDs is obtained using an on-wafer measurement-based modeling technique. This circuit-level model of MSM PDs can be used for capacitance sensitive preamplifier design for co-optimization with widely used simulators. (ADS and HSPICE). The obtained circuit-level model shows good agreement with measured s-parameters.

Duke Scholars

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

ISSN

0277-786X

Publication Date

August 16, 2004

Volume

5353

Start / End Page

89 / 96

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering
 

Citation

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Cha, C., Kim, J. H., Huang, Z., Jokerst, N. M., & Brooke, M. A. (2004). Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures. Proceedings of SPIE - The International Society for Optical Engineering, 5353, 89–96. https://doi.org/10.1117/12.531640
Cha, C., J. H. Kim, Z. Huang, N. M. Jokerst, and M. A. Brooke. “Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures.” Proceedings of SPIE - The International Society for Optical Engineering 5353 (August 16, 2004): 89–96. https://doi.org/10.1117/12.531640.
Cha C, Kim JH, Huang Z, Jokerst NM, Brooke MA. Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures. Proceedings of SPIE - The International Society for Optical Engineering. 2004 Aug 16;5353:89–96.
Cha, C., et al. “Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures.” Proceedings of SPIE - The International Society for Optical Engineering, vol. 5353, Aug. 2004, pp. 89–96. Scopus, doi:10.1117/12.531640.
Cha C, Kim JH, Huang Z, Jokerst NM, Brooke MA. Improved measurement-based modeling of inverted-MSM photodetectors using on-wafer calibration structures. Proceedings of SPIE - The International Society for Optical Engineering. 2004 Aug 16;5353:89–96.

Published In

Proceedings of SPIE - The International Society for Optical Engineering

DOI

ISSN

0277-786X

Publication Date

August 16, 2004

Volume

5353

Start / End Page

89 / 96

Related Subject Headings

  • 5102 Atomic, molecular and optical physics
  • 4009 Electronics, sensors and digital hardware
  • 4006 Communications engineering