Skip to main content

Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms

Publication ,  Journal Article
Camperi-Ginestet, C; Hargis, M; Jokerst, N; Allen, M
Published in: IEEE Photonics Technology Letters
January 1, 1991

In this letter we report the selective and alignable deposition of patterned thin-film epitaxial GaAs/GaAlAs devices onto a host substrate such as silicon for low cost, manufacturable hybrid integrated optoelectronic circuits. We use a thin polyimide diaphragm as the transparent transfer medium for these patterned epitaxial devices. Each of these devices or a group of these devices on the polyimide is then optically aligned and selectively deposited onto the host substrate. Using this technique, a light emitting diode 50 × 50 μm in area and 2 μm thick was grown on a GaAs substrate, lifted off, aligned and selectively deposited onto a silicon host substrate, and electrically contacted and tested. Using this method, the sparse distribution of costly photonic devices or the deposition of aligned arrays of devices to fabricate larger arrays without large area growth of photonic devices can be achieved on a variety of smooth host substrates. © 1991 IEEE

Duke Scholars

Altmetric Attention Stats
Dimensions Citation Stats

Published In

IEEE Photonics Technology Letters

DOI

EISSN

1941-0174

ISSN

1041-1135

Publication Date

January 1, 1991

Volume

3

Issue

12

Start / End Page

1123 / 1126

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4006 Communications engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics
 

Citation

APA
Chicago
ICMJE
MLA
NLM
Camperi-Ginestet, C., Hargis, M., Jokerst, N., & Allen, M. (1991). Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms. IEEE Photonics Technology Letters, 3(12), 1123–1126. https://doi.org/10.1109/68.118028
Camperi-Ginestet, C., M. Hargis, N. Jokerst, and M. Allen. “Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms.” IEEE Photonics Technology Letters 3, no. 12 (January 1, 1991): 1123–26. https://doi.org/10.1109/68.118028.
Camperi-Ginestet C, Hargis M, Jokerst N, Allen M. Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms. IEEE Photonics Technology Letters. 1991 Jan 1;3(12):1123–6.
Camperi-Ginestet, C., et al. “Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms.” IEEE Photonics Technology Letters, vol. 3, no. 12, Jan. 1991, pp. 1123–26. Scopus, doi:10.1109/68.118028.
Camperi-Ginestet C, Hargis M, Jokerst N, Allen M. Alignable Epitaxial Liftoff of GaAs Materials with Selective Deposition Using Polyimide Diaphragms. IEEE Photonics Technology Letters. 1991 Jan 1;3(12):1123–1126.

Published In

IEEE Photonics Technology Letters

DOI

EISSN

1941-0174

ISSN

1041-1135

Publication Date

January 1, 1991

Volume

3

Issue

12

Start / End Page

1123 / 1126

Related Subject Headings

  • Optoelectronics & Photonics
  • 5102 Atomic, molecular and optical physics
  • 4006 Communications engineering
  • 0906 Electrical and Electronic Engineering
  • 0205 Optical Physics