Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors
Publication
, Journal Article
Huang, Z; Ueno, Y; Kaneko, K; Jokerst, NM; Tanahashi, S
Published in: Electronics Letters
December 5, 2002
The integration of InGaAs photodetectors embedded in a polymer interconnection waveguide on Si and ceramic electrical interconnection substrates has been demonstrated. The photodetector and substrate are independently fabricated and bonded, with subsequent waveguide integration. The embedding fabrication process, coupling, and bandwidth are reported at 1 Gbit/s.
Duke Scholars
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
December 5, 2002
Volume
38
Issue
25
Start / End Page
1708 / 1709
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing
Citation
APA
Chicago
ICMJE
MLA
NLM
Huang, Z., Ueno, Y., Kaneko, K., Jokerst, N. M., & Tanahashi, S. (2002). Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors. Electronics Letters, 38(25), 1708–1709. https://doi.org/10.1049/el:20021047
Huang, Z., Y. Ueno, K. Kaneko, N. M. Jokerst, and S. Tanahashi. “Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors.” Electronics Letters 38, no. 25 (December 5, 2002): 1708–9. https://doi.org/10.1049/el:20021047.
Huang Z, Ueno Y, Kaneko K, Jokerst NM, Tanahashi S. Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors. Electronics Letters. 2002 Dec 5;38(25):1708–9.
Huang, Z., et al. “Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors.” Electronics Letters, vol. 38, no. 25, Dec. 2002, pp. 1708–09. Scopus, doi:10.1049/el:20021047.
Huang Z, Ueno Y, Kaneko K, Jokerst NM, Tanahashi S. Embedded optical interconnections using thin film InGaAs metal-semiconductor-metal photodetectors. Electronics Letters. 2002 Dec 5;38(25):1708–1709.
Published In
Electronics Letters
DOI
ISSN
0013-5194
Publication Date
December 5, 2002
Volume
38
Issue
25
Start / End Page
1708 / 1709
Related Subject Headings
- Electrical & Electronic Engineering
- 4009 Electronics, sensors and digital hardware
- 4006 Communications engineering
- 1005 Communications Technologies
- 0906 Electrical and Electronic Engineering
- 0801 Artificial Intelligence and Image Processing