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Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers

Publication ,  Journal Article
Evers, N; Laskar, J; Jokerst, NM; Moise, TS; Kao, YC
Published in: Applied Physics Letters
May 5, 1997

We report the dc and high frequency performance of thin-film InP-based tunneling hot electron transfer amplifiers bonded to a variety of host substrates. The high-frequency device performance is slightly degraded since the InP substrate removal and bonding process for these devices have not yet been optimized. This demonstration represents an important step toward the development of high-frequency, thin-film InP-based electronic devices integrated with conventional Si-based circuit elements. © 1997 American Institute of Physics.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

May 5, 1997

Volume

70

Issue

18

Start / End Page

2452 / 2454

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Evers, N., Laskar, J., Jokerst, N. M., Moise, T. S., & Kao, Y. C. (1997). Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers. Applied Physics Letters, 70(18), 2452–2454. https://doi.org/10.1063/1.118853
Evers, N., J. Laskar, N. M. Jokerst, T. S. Moise, and Y. C. Kao. “Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers.” Applied Physics Letters 70, no. 18 (May 5, 1997): 2452–54. https://doi.org/10.1063/1.118853.
Evers N, Laskar J, Jokerst NM, Moise TS, Kao YC. Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers. Applied Physics Letters. 1997 May 5;70(18):2452–4.
Evers, N., et al. “Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers.” Applied Physics Letters, vol. 70, no. 18, May 1997, pp. 2452–54. Scopus, doi:10.1063/1.118853.
Evers N, Laskar J, Jokerst NM, Moise TS, Kao YC. Direct current and high frequency performance of thin film InP-based tunneling hot electron transfer amplifiers. Applied Physics Letters. 1997 May 5;70(18):2452–2454.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

May 5, 1997

Volume

70

Issue

18

Start / End Page

2452 / 2454

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences