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High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k

Publication ,  Journal Article
Stiff, AD; Krishna, S; Bhattacharya, P; Kennerly, S
Published in: Applied Physics Letters
July 16, 2001

A mid-infrared normal-incidence InAs/GaAs quantum-dot detector containing Al0.3Ga0.7As with peak responsivity and a very high peak detectivity was studied. The detectors were grown, fabricated and characterized in the temperature range of 78 to 150 K. The device had very low dark current with a photoconductive gain and improved the high-temperature performance of normal-incidence vertical quantum-dot infrared photodetectors.

Duke Scholars

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

July 16, 2001

Volume

79

Issue

3

Start / End Page

421 / 423

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences
 

Citation

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Stiff, A. D., Krishna, S., Bhattacharya, P., & Kennerly, S. (2001). High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k. Applied Physics Letters, 79(3), 421–423. https://doi.org/10.1063/1.1385584
Stiff, A. D., S. Krishna, P. Bhattacharya, and S. Kennerly. “High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k.” Applied Physics Letters 79, no. 3 (July 16, 2001): 421–23. https://doi.org/10.1063/1.1385584.
Stiff AD, Krishna S, Bhattacharya P, Kennerly S. High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k. Applied Physics Letters. 2001 Jul 16;79(3):421–3.
Stiff, A. D., et al. “High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k.” Applied Physics Letters, vol. 79, no. 3, July 2001, pp. 421–23. Scopus, doi:10.1063/1.1385584.
Stiff AD, Krishna S, Bhattacharya P, Kennerly S. High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k. Applied Physics Letters. 2001 Jul 16;79(3):421–423.

Published In

Applied Physics Letters

DOI

ISSN

0003-6951

Publication Date

July 16, 2001

Volume

79

Issue

3

Start / End Page

421 / 423

Related Subject Headings

  • Applied Physics
  • 51 Physical sciences
  • 40 Engineering
  • 10 Technology
  • 09 Engineering
  • 02 Physical Sciences