Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation
Publication
, Journal Article
Wolter, SD; Stoner, BR; Glass, JT; Ellis, PJ; Buhaenko, DS; Jenkins, CE; Southworth, P
Published in: Applied Physics Letters
December 1, 1993
Ordered diamond films have been deposited on single-crystal silicon substrates via an in situ carburization followed by bias-enhanced nucleation. Textured diamond films with greater than 50% of the grains oriented D(100)//Si(100) and D〈110〉//Si〈110〉 were grown in both a horizontal and vertical microwave plasma chemical vapor deposition reactor. Separate diamond films from each of the two reactors were analyzed both by scanning electron microscopy and Raman spectroscopy. The in situ carburization is speculated to form an epitaxial SiC conversion layer, thus providing an economical alternative to obtaining epitaxial diamond films on single-crystal SiC.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
11
Start / End Page
1215 / 1217
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Wolter, S. D., Stoner, B. R., Glass, J. T., Ellis, P. J., Buhaenko, D. S., Jenkins, C. E., & Southworth, P. (1993). Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation. Applied Physics Letters, 62(11), 1215–1217. https://doi.org/10.1063/1.108738
Wolter, S. D., B. R. Stoner, J. T. Glass, P. J. Ellis, D. S. Buhaenko, C. E. Jenkins, and P. Southworth. “Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation.” Applied Physics Letters 62, no. 11 (December 1, 1993): 1215–17. https://doi.org/10.1063/1.108738.
Wolter SD, Stoner BR, Glass JT, Ellis PJ, Buhaenko DS, Jenkins CE, et al. Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation. Applied Physics Letters. 1993 Dec 1;62(11):1215–7.
Wolter, S. D., et al. “Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation.” Applied Physics Letters, vol. 62, no. 11, Dec. 1993, pp. 1215–17. Scopus, doi:10.1063/1.108738.
Wolter SD, Stoner BR, Glass JT, Ellis PJ, Buhaenko DS, Jenkins CE, Southworth P. Textured growth of diamond on silicon via in situ carburization and bias-enhanced nucleation. Applied Physics Letters. 1993 Dec 1;62(11):1215–1217.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1993
Volume
62
Issue
11
Start / End Page
1215 / 1217
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences