Control of microelectromechanical systems membrane curvature by silicon ion implantation
Publication
, Journal Article
Jin, S; Mavoori, H; Kim, J; Aksyuk, VA
Published in: Applied Physics Letters
2003
A study was performed on control of microelectromechanical systems (MEMS) membrane curvature by silicon ion implantation. The Si+ ion implantations were applied at dose levels of 0.4-5×1016/cm 2 into the gold metallization layer to reduce the mirror curvature. It was found that the curvature change as well as the temperature dependence were dependent on the implantation dose.
Duke Scholars
Published In
Applied Physics Letters
DOI
Publication Date
2003
Volume
83
Issue
12
Start / End Page
2321 / 2323
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
Chicago
ICMJE
MLA
NLM
Jin, S., Mavoori, H., Kim, J., & Aksyuk, V. A. (2003). Control of microelectromechanical systems membrane curvature by silicon ion implantation. Applied Physics Letters, 83(12), 2321–2323. https://doi.org/10.1063/1.1611639
Jin, S., H. Mavoori, J. Kim, and V. A. Aksyuk. “Control of microelectromechanical systems membrane curvature by silicon ion implantation.” Applied Physics Letters 83, no. 12 (2003): 2321–23. https://doi.org/10.1063/1.1611639.
Jin S, Mavoori H, Kim J, Aksyuk VA. Control of microelectromechanical systems membrane curvature by silicon ion implantation. Applied Physics Letters. 2003;83(12):2321–3.
Jin, S., et al. “Control of microelectromechanical systems membrane curvature by silicon ion implantation.” Applied Physics Letters, vol. 83, no. 12, 2003, pp. 2321–23. Scival, doi:10.1063/1.1611639.
Jin S, Mavoori H, Kim J, Aksyuk VA. Control of microelectromechanical systems membrane curvature by silicon ion implantation. Applied Physics Letters. 2003;83(12):2321–2323.
Published In
Applied Physics Letters
DOI
Publication Date
2003
Volume
83
Issue
12
Start / End Page
2321 / 2323
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences