Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles
Publication
, Journal Article
Coskun, UC; Mebrahtu, H; Huang, PB; Huang, J; Sebba, D; Biasco, A; Makarovski, A; Lazarides, A; Labean, TH; Finkelstein, G
Published in: Applied Physics Letters
September 2008
We describe a method to pattern SiO2 surfaces with colloidal gold nanoparticles by e-beam lithography and selective nanoparticle deposition. The simple technique allows us to deposit nanoparticles in continuous straight lines, just one nanoparticle wide and many nanoparticles long. We contact the prepositioned nanoparticles with metal leads to form single electron transistors. The Coulomb blockade pattern surprisingly does not show the parasitic "offset charges" at low temperatures, indicating relatively little surface contamination. (C) 2008 American Institute of Physics.
Duke Scholars
Published In
Applied Physics Letters
ISSN
0003-6951
Publication Date
September 2008
Volume
93
Issue
12
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
Citation
APA
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ICMJE
MLA
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Coskun, U. C., Mebrahtu, H., Huang, P. B., Huang, J., Sebba, D., Biasco, A., … Finkelstein, G. (2008). Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles. Applied Physics Letters, 93(12).
Coskun, U. C., H. Mebrahtu, P. B. Huang, J. Huang, D. Sebba, A. Biasco, A. Makarovski, A. Lazarides, T. H. Labean, and G. Finkelstein. “Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles.” Applied Physics Letters 93, no. 12 (September 2008).
Coskun UC, Mebrahtu H, Huang PB, Huang J, Sebba D, Biasco A, et al. Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles. Applied Physics Letters. 2008 Sep;93(12).
Coskun, U. C., et al. “Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles.” Applied Physics Letters, vol. 93, no. 12, Sept. 2008.
Coskun UC, Mebrahtu H, Huang PB, Huang J, Sebba D, Biasco A, Makarovski A, Lazarides A, Labean TH, Finkelstein G. Single-electron transistors made by chemical patterning of silicon dioxide substrates and selective deposition of gold nanoparticles. Applied Physics Letters. 2008 Sep;93(12).
Published In
Applied Physics Letters
ISSN
0003-6951
Publication Date
September 2008
Volume
93
Issue
12
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences