Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition
Publication
, Journal Article
Stoner, BR; Glass, JT
Published in: Applied Physics Letters
December 1, 1992
Textured diamond films have been deposited on β-SiC via microwave plasma chemical vapor deposition preceded by an in situ bias pretreatment that enhances nucleation. Approximately 50% of the initial diamond nuclei appear to be aligned with the C(001) planes parallel to the SiC(001), and C[110] directions parallel to the SiC[110] within 3°. The diamond was characterized by Raman spectroscopy and scanning electron microscopy.
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Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1992
Volume
60
Issue
6
Start / End Page
698 / 700
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences
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Stoner, B. R., & Glass, J. T. (1992). Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition. Applied Physics Letters, 60(6), 698–700. https://doi.org/10.1063/1.106541
Stoner, B. R., and J. T. Glass. “Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition.” Applied Physics Letters 60, no. 6 (December 1, 1992): 698–700. https://doi.org/10.1063/1.106541.
Stoner BR, Glass JT. Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition. Applied Physics Letters. 1992 Dec 1;60(6):698–700.
Stoner, B. R., and J. T. Glass. “Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition.” Applied Physics Letters, vol. 60, no. 6, Dec. 1992, pp. 698–700. Scopus, doi:10.1063/1.106541.
Stoner BR, Glass JT. Textured diamond growth on (100) β-SiC via microwave plasma chemical vapor deposition. Applied Physics Letters. 1992 Dec 1;60(6):698–700.
Published In
Applied Physics Letters
DOI
ISSN
0003-6951
Publication Date
December 1, 1992
Volume
60
Issue
6
Start / End Page
698 / 700
Related Subject Headings
- Applied Physics
- 51 Physical sciences
- 40 Engineering
- 10 Technology
- 09 Engineering
- 02 Physical Sciences